tsm7900d Taiwan Semiconductor Company, Ltd. (TSC), tsm7900d Datasheet
tsm7900d
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tsm7900d Summary of contents
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... High Density Cell Design for Ultra Low On-resistance ● ESD Protect 2KV Application ● Specially Designed for Li-on Battery Packs ● Battery Switch Application Ordering Information Part No. Package TSM7900DCQ RL TDFN 3x3 Absolute Maximum Rating Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current, V @4.5V. GS Pulsed Drain Current, V @4.5V ...
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... 4. iss V = 10V 0V oss f = 1.0MHz C rss t d(on 10V 10Ω 1A 4.5V, D GEN t d(off 6Ω 2/6 TSM7900D Min Typ Max Unit 0.6 0.8 1 ±100 1 mΩ 0.6 1 3.4 ...
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... Electrical Characteristics Curve Output Characteristics On-Resistance vs. Drain Current On-Resistance vs. Junction Temperature 20V Dual N-Channel MOSFET w/ESD Protected o ( unless otherwise noted) Source-Drain Diode Forward Voltage 3/6 TSM7900D Transfer Characteristics Gate Charge Version: A07 ...
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... Electrical Characteristics Curve On-Resistance vs. Gate-Source Voltage Single Pulse Power Normalized Thermal Transient Impedance, Junction-to-Ambient 20V Dual N-Channel MOSFET w/ESD Protected o ( unless otherwise noted) 4/6 TSM7900D Threshold Voltage Version: A07 ...
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... Dual N-Channel MOSFET w/ESD Protected TDFN Mechanical Drawing DIM 5/6 TSM7900D TDFN 3x3 DIMENSION MILLIMETERS MIN. TYP. 1.750 1.800 0.470 0.520 0.270 0.320 2.950 3.000 2.950 3.000 2.250 2.300 0.177 0.203 0.610 0.660 I 0.005 0.020 0.650 0.750 MAX ...
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... The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications. Customers using or selling these products for use in such applications their own risk and agree to fully indemnify TSC for any damages resulting from such improper use or sale. 20V Dual N-Channel MOSFET w/ESD Protected Notice 6/6 TSM7900D Version: A07 ...