ech8504 Sanyo Semiconductor Corporation, ech8504 Datasheet - Page 2

• Manufacturer Part Number: ech8504
• Description: Pnp Epitaxial Planar Silicon Transistor
• Manufacturer: Sanyo Semiconductor Corporation

Electrical Characteristics at Ta=25°C
Switching Time Test Circuit
Note) The specifi cations shown above are for each individual transistor.
Collector Cutoff Current
Emitter Cutoff Current
DC Current Gain
Gain-Bandwidth Product
Output Capacitance
Collector-to-Emitter Saturation Voltage
Base-to-Emitter Saturation Voltage
Collector-to-Base Breakdown Voltage
Collector-to-Emitter Breakdown Voltage
Emitter-to-Base Breakdown Voltage
Turn-On Time
Storage Time
Fall Time
--1.0
--0.9
--0.8
--0.7
--0.6
--0.5
--0.4
--0.3
--0.2
--0.1
0
0
I C = --10I B1 =10I B2 = --1A
INPUT
PW=20μs
D.C.≤1%
50Ω
Parameter
Collector-to-Emitter Voltage, V CE -- V
--0.1
V BE =5V
V R
--0.2
I C -- V CE
I B1
100μF
I B2
R B
+
--0.3
470μF
+
I CBO
I EBO
h FE
f T
Cob
V BE (sat)
V (BR)CBO
V (BR)EBO
t on
t stg
t f
V CE (sat)
V (BR)CEO
V CC = --50V
Symbol
--0.4
R L
V OUT
I B =0mA
V CB = -80V, I E =0A
V EB = -4V, I C =0A
V CE = -5V, I C = -100mA
V CE = -10V, I C = -500mA
V CB = -10V, f=1MHz
I C = -1A, I B = -100mA
I C = -1A, I B = -100mA
I C = -10μA, I E =0A
I C = -1mA, R BE =∞
I E = -10μA, I C =0A
See specifi ed Test Circuit.
See specifi ed Test Circuit.
See specifi ed Test Circuit.
IT15458
--0.5
ECH8504
Conditions
--2.0
--1.8
--1.6
--1.4
--1.2
--1.0
--0.8
--0.6
--0.4
--0.2
0
0
Collector-to-Emitter Voltage, V CE -- V
--1
min
-100
-100
I C -- V CE
200
--2
-7
Ratings
typ
-0.85
250
420
--3
-75
28
25
20
max
-130
-1.2
560
--4
-1
-1
No. A1681-2/4
I B =0mA
IT15459
MHz
Unit
mV
μA
μA
pF
ns
ns
ns
V
V
V
V
--5