tpcm8001-h TOSHIBA Semiconductor CORPORATION, tpcm8001-h Datasheet - Page 6

• Manufacturer Part Number: tpcm8001-h
• Description: Toshiba Field Effect Transistor Silicon N-channel Mos Type Ultra-high-speed U-mosiii
• Manufacturer: TOSHIBA Semiconductor CORPORATION

100
0.1
10
1
0.1
I D max (Pulse)
I D max (Continuous)
Curves
linearly
temperature.
* Single - pulse
Ta = 25°C
Drain-source voltage V
must
with
*
Safe operating area
1000
100
0.1
increase
10
0.001
be
1
DC operation
1
Tc = 25°C
derated
(1) Device mounted on a glass-epoxy board (a) (Note 2a)
(2) Device mounted on a glass-epoxy board (b) (Note 2b)
(3) Tc=25°C
in
V DSS max
0.01
10
t =1 ms
DS
10 ms
*
(V)
*
0.1
100
Pulse width t
r
th
6
− t
1
w
w
(s)
50
40
30
20
10
0
0
10
Case temperature T
40
100
Single - pulse
P
D
80
– Tc
(3)
(2)
(1)
1000
C
120
TPCM8001-H
(
°
C)
2006-11-16
160