bss215p Infineon Technologies Corporation, bss215p Datasheet - Page 7

• Manufacturer Part Number: bss215p
• Description: Optimos
• Manufacturer: Infineon Technologies Corporation

Rev 2.2
13 Avalanche characteristics
I
parameter: T
15 Drain-source breakdown voltage
V
AS
BR(DSS)
=f(t
10
10
10
24
23
22
21
20
19
18
17
16
AV
-1
1
0
-60
=f(T
10
); R
0
j
GS
); I
j(start)
=25 Ω
-20
D
=250 µA
10
20
1
t
T
AV
j
[°C]
[µs]
60
10
2
100
125 °C
100 °C
140
25 °C
10
page 7
3
14 Typ. gate charge
V
parameter: V
16 Gate charge waveforms
GS
=f(Q
Q
V
V
6
5
4
3
2
1
0
g(th)
g s(th)
GS
0
gate
); I
DD
Q
D
=-1.5 A pulsed
g s
1
2
Q
Q
gate
g
4 V
Q
sw
[nC]
Q
10 V
g d
3
16 V
4
BSS215P
Q
g ate
2010-03-29
5