k6t1008c2e Samsung Semiconductor, Inc., k6t1008c2e Datasheet - Page 2

• Manufacturer Part Number: k6t1008c2e
• Description: 128kx8 Bit Low Power Cmos Static Ram
• Manufacturer: Samsung Semiconductor, Inc.

VSS
I/O1
I/O2
I/O3
N.C
A16
A14
A12
PIN DESCRIPTION
K6T1008C2E Family
128Kx8 bit Low Power CMOS Static RAM
PRODUCT FAMILY
1. The parameters are tested with 50pF test load
A7
A6
A5
A4
A3
A2
A1
A0
FEATURES
K6T1008C2E-L
K6T1008C2E-B
K6T1008C2E-P
K6T1008C2E-F
Process Technology: TFT
Organization: 128Kx8
Power Supply Voltage: 4.5~5.5V
Low Data Retention Voltage: 2V(Min)
Three state output and TTL Compatible
Package Type: 32-DIP-600, 32-SOP-525,
Product Family
SAMSUNG ELECTRONICS CO., LTD. reserves the right to change products and specifications without notice.
1
2
3
4
5
6
7
8
9
10
11
12
13
14
15
16
CS
I/O
A
32-SOP
Name
32-DIP
N.C.
0
WE
Vcc
Vss
OE
1
1
~A
~I/O
, CS
16
2
8
32-TSOP1-0820F/R
32
31
30
29
28
27
26
25
24
23
22
21
20
19
18
17
VCC
A15
CS2
WE
A13
A8
A9
A11
OE
A10
CS1
I/O8
I/O7
I/O6
I/O5
I/O4
Operating Temperature
Chip Select Input
Output Enable Input
Write Enable Input
Data Inputs/Outputs
Address Inputs
Power
Ground
No Connection
Commercial(0~70 C)
Industrial(-40~85 C)
VCC
VCC
CS2
CS2
A14
A13
A15
A12
A12
A14
A16
A13
A11
A11
WE
A16
A15
WE
NC
NC
A9
A7
A6
A5
A7
A8
A8
A5
A4
A4
A6
A9
1
2
3
4
5
6
7
8
9
10
11
12
13
14
15
16
16
15
14
13
12
11
10
9
8
7
6
5
4
3
2
1
Function
Type1-Reverse
Type1-Forward
32-TSOP
32-TSOP
Vcc Range
4.5~5.5V
32
31
30
29
28
27
26
25
24
23
22
21
20
19
18
17
17
18
19
20
21
22
23
24
25
26
27
28
29
30
31
32
OE
A10
CS1
I/O8
I/O7
I/O6
I/O5
I/O4
VSS
I/O3
I/O2
I/O1
A0
A1
A2
A3
A3
A2
A1
A0
I/O1
I/O2
I/O3
VSS
I/O4
I/O5
I/O6
I/O7
I/O8
CS1
A10
OE
55
2
Speed
1)
/70ns
FUNCTIONAL BLOCK DIAGRAM
GENERAL DESCRIPTION
advanced CMOS process technology. The families support
various operating temperature ranges and have various pack-
age types for user flexibility of system design. The families
also support low data retention voltage for battery back-up
operation with low data retention current.
The K6T1008C2E families are fabricated by SAMSUNG s
CS
CS
WE
OE
1
2
I/O
I/O
Raw
Address
(I
1
8
Control
logic
Standby
SB1
Power Dissipation
50 A
10 A
50 A
15 A
, Max)
Clk gen.
(I
Operating
CC2,
Data
cont
Data
cont
50mA
Row
select
Max)
CMOS SRAM
32-DIP-600, 32-SOP-525
32-TSOP1-0820F/R
32-SOP -525
32-TSOP1-0820F/R
Precharge circuit.
Memory array
1024 rows
128 8 columns
Column Address
Column select
I/O Circuit
PKG Type
Revision 3.0
March 2000