km29w32000ait Samsung Semiconductor, Inc., km29w32000ait Datasheet - Page 6

• Manufacturer Part Number: km29w32000ait
• Description: 8-bit Nand Flash Memory
• Manufacturer: Samsung Semiconductor, Inc.

ABSOLUTE MAXIMUM RATINGS
NOTE :
1. Minimum DC voltage is -0.3V on input/output pins. During transitions, this level may undershoot to -2.0V for periods <30ns.
2. Permanent device damage may occur if ABSOLUTE MAXIMUM RATINGS are exceeded. Functional operation should be restricted to the conditions
RECOMMENDED OPERATING
(Voltage reference to GND, KM29W32000AT:T
NOTE : 1. Vcc and VccQ pins are separated each other.
DC AND OPERATING CHARACTERISTICS
KM29W32000AT, KM29W32000AIT
Stand-by Current(TTL)
Stand-by Current(CMOS)
Input Leakage Current
Output Leakage Current
Input High Voltage
Input Low Voltage, All inputs
Output High Voltage Level
Output Low Voltage Level
Output Low Current(R/B)
Operating
Voltage on any pin relative to V
Temperature Under Bias
Storage Temperature
Short Circuit Output Current
Supply Voltage
Supply Voltage
Supply Voltage
Current
Maximum DC voltage on input/output pins is V
as detailed in the operational sections of this data sheet. Exposure to absolute maximum rating conditions for extended periods may affect reliability.
Parameter
Sequential Read
Program
Erase
Parameter
Parameter
KM29W32000AIT
KM29W32000AT
Symbol
I
OL
SS
I
I
I
I
I
V
V
CC
CC
CC
V
V
SB
SB
I
(R/B) V
I
LO
OH
LI
OL
IH
IL
1
2
3
1
2
Symbol
tcycle=80ns, CE=V
CE=V
CE=V
V
V
I/O pins
Except I/O pins
I
I
OH
OL
V
IN
OUT
OL
V
V
CC
CC
=2.1mA
=0 to 5.5V
=-400 A
CC
SS
=0.4V
Q+0.3V which, during transitions, may overshoot to V
CONDITIONS
Q
=0 to 5.5V
IH
CC
, WP=SE=0V/V
Test Conditions
-0.2, WP=SE=0V/V
A
=0 to 70 C, KM29W32000AIT:T
-
-
-
Symbol
IL
T
T
, I
V
I
BIAS
STG
OS
Min
(Recommended operating conditions otherwise noted.)
2.7
2.7
IN
OUT
0
CC
6
=0mA
CC
Min
-0.3
2.0
2.0
2.4
8
-
-
-
-
-
-
-
-
Vcc=2.7V ~ 3.6V
Typ.
Typ
0
-
-
10
10
10
10
10
-
-
-
-
-
-
-
-
-0.6 to +7.0
-10 to +125
-40 to +125
-65 to +150
Rating
V
5
V
A
CC
CC
=-40 to 85 C)
CC
Max
0.6
0.4
20
20
20
50
Q+0.3
+2.0V for periods <20ns.
1
10
10
-
-
+0.3
FLASH MEMORY
Max
5.5
5.5
0
Min
-0.3
3.0
3.0
2.4
8
-
-
-
-
-
-
-
-
Vcc=3.6V ~ 5.5V
Typ
15
15
25
10
10
-
-
-
-
-
-
-
-
V
Unit
mA
V
CC
V
C
C
CC
Max
0.8
0.4
30
30
40
50
Q+0.5
1
10
10
Unit
-
-
+0.5
V
V
V
Unit
mA
mA
V
A