hat2168n Renesas Electronics Corporation., hat2168n Datasheet - Page 4

• Manufacturer Part Number: hat2168n
• Description: Silicon N Channel Power Mos Fet Power Switching
• Manufacturer: Renesas Electronics Corporation.

HAT2168N
REJ03G1682-0200 Rev.2.00 May 27, 2008
Page 4 of 6
100
Static Drain to Source on State Resistance
20
20
16
12
50
10
50
40
30
20
10
8
4
0
-25
0.1
0
V
V
Pulse Test
Reverse Drain Current I
I
10 V
D
DS
GS
Dynamic Input Characteristics
Case Temperature Tc ( C)
= 30 A
0
Body-Drain Diode Reverse
0.3
= 4.5 V
Gate Charge Qg (nc)
8
V
25
vs. Temperature
Recovery Time
DD
1
= 25 V
16
V
50
10 V
DD
5 V
3
di/dt = 100 A/ s
V
= 25 V
5 A, 10 A, 20 A
GS
75
10 V
24
5 V
= 0, Ta = 25 C
I
D
10
100 125 150
= 20 A
10 A, 5A
DR
32
V
30
GS
(A)
100
40
20
16
12
8
4
0
10000
3000
1000
100
100
300
100
0.3
0.1
30
10
10
30
10
30
3
1
3
1
0.1
0.1
0
Drain to Source Voltage V
V
Rg = 4.7 , duty
Forward Transfer Admittance vs.
V
f = 1 MHz
GS
GS
0.3
0.3
= 10 V, V
5
Switching Characteristics
Tc = -25 C
Drain to Source Voltage
Typical Capacitance vs.
= 0
Drain Current I
Drain Current I
10
1
Drain Current
25 C
1
DS
= 10 V
15
3
t d(off)
3
1 %
10
20
10
D
V
Pulse Test
D
DS
75 C
(A)
(A)
= 10 V
30
DS
30
25
t d(on)
Coss
t f
Ciss
Crss
t r
(V)
100
100
30