hat2164h05 Renesas Electronics Corporation., hat2164h05 Datasheet
hat2164h05
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hat2164h05 Summary of contents
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HAT2164H Silicon N Channel Power MOS FET Power Switching Features Capable of 4.5 V gate drive Low drive current High density mounting Low on-resistance R = 2.5 m typ. ( DS(on) GS Outline RENESAS Package code: ...
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HAT2164H Electrical Characteristics Item Drain to source breakdown voltage Gate to source breakdown voltage Gate to source leak current Zero gate voltage drain current Gate to source cutoff voltage Static drain to source on state resistance Forward transfer admittance Input ...
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HAT2164H Main Characteristics Power vs. Temperature Derating 100 Case Temperature Typical Output Characteristics 100 10 V Pulse Test Drain to Source Voltage Drain to Source ...
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HAT2164H Static Drain to Source on State Resistance vs. Temperature 8 Pulse Test 4 - Case Temperature Body-Drain Diode Reverse Recovery Time 100 ...
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HAT2164H Reverse Drain Current vs. Source to Drain Voltage 100 0.4 0.8 1.2 Source to Drain Voltage 0.5 0.3 0.1 0.03 0.01 10 µ ...
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HAT2164H Switching Time Test Circuit Vin Monitor D.U.T. Rg Vin 10 V Rev.5.00 Sep 26, 2005 page Vout Monitor R Vin L Vout d(on) Switching Time Waveform 90% 10% 10% 10% ...
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HAT2164H Package Dimensions JEITA Package Code RENESAS Code SC-100 PTZZ0005DA-A 1 Ordering Information Part Name HAT2164H-EL-E 2500 pcs Note: For some grades, production may be terminated. Please contact the Renesas sales office to check the state of production before ordering ...
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Keep safety first in your circuit designs! 1. Renesas Technology Corp. puts the maximum effort into making semiconductor products better and more reliable, but there is always the possibility that trouble may occur with them. Trouble with semiconductors may lead ...