hat2038r Renesas Electronics Corporation., hat2038r Datasheet - Page 3

• Manufacturer Part Number: hat2038r
• Description: Silicon N Channel Power Mos Fet High Speed Power Switching
• Manufacturer: Renesas Electronics Corporation.

HAT2038R, HAT2038RJ
Main Characteristics
Rev.5.00 Sep 07, 2005 page 3 of 7
4.0
3.0
2.0
1.0
0.5
0.4
0.3
0.2
0.1
10
0
8
6
4
2
0
0
Drain to Source Saturation Voltage vs.
0
0
0
Drain to Source Voltage
Gate to Source Voltage
Test Condition:
Power vs. Temperature Derating
Ambient Temperature
When using the glass epoxy board
(FR4 40 × 40 × 1.6 mm), PW ≤ 10 s
Typical Output Characteristics
Gate to Source Voltage
3.5 V
10 V
2
4
4 V
50
8
4
100
12
6
150
Pulse Test
Pulse Test
V
Ta (°C)
V
V
16
GS
I
8
D
GS
DS
= 5 A
= 2 V
2.5 V
1 A
2 A
3 V
(V)
(V)
200
10
20
0.03
0.01
0.05
0.02
0.01
100
0.3
0.1
Static Drain to Source on State Resistance
1.0
0.5
0.2
0.1
30
10
10
3
1
8
6
4
2
0
0.1
0.1
0
Drain to Source Voltage
Gate to Source Voltage
Ta = 25°C
1 shot Pulse
Pulse Test
Operation in
this area is
limited by R
V
Pulse Test
Note 6:
Typical Transfer Characteristics
Maximum Safe Operation Area
DS
When using the glass epoxy board
(FR4 40 × 40 × 1.6 mm)
0.3
0.3
Tc = 75°C
= 10 V
Drain Current
1
vs. Drain Current
1
1
DS (on)
V
2
GS
3
3
= 4 V
10 V
3
–25°C
I
10
10
D
25°C
(A)
V
V
4
30
GS
30
DS
10 µs
(V)
(V)
100
100
5