hat2037t Renesas Electronics Corporation., hat2037t Datasheet - Page 5

• Manufacturer Part Number: hat2037t
• Description: Silicon N Channel Power Mos Fet High Speed Power Switching
• Manufacturer: Renesas Electronics Corporation.

500
200
100
50
20
10
50
40
30
20
10
5
0.1
0
V
I
DS
Reverse Drain Current
D
0.2
Dynamic Input Characteristics
= 5.5 A
Body–Drain Diode Reverse
4
Gate Charge
0.5
Recovery Time
V
DD
8
di/dt = 20 A/µs
V
= 5 V
GS
1
10 V
25 V
12
= 0, Ta = 25°C
V
Qg (nc)
DD
2
= 25 V
I
DR
10 V
16
5 V
V
5
GS
(A)
10
20
10
8
6
4
2
0
10000
3000
1000
1000
100
500
200
100
300
30
10
50
20
10
0.1
0
V
PW = 3 µs, duty < 1 %
Drain to Source Voltage V
GS
0.2
10
Switching Characteristics
= 4 V, V
Typical Capacitance vs.
Drain to Source Voltage
Drain Current
t
0.5
d(off)
t f
20
t
DD
d(on)
r t
Coss
Ciss
Crss
= 10 V
1
30
2
I
D
V
f = 1 MHz
HAT2037T
GS
(A)
40
DS
= 0
5
(V)
50
10
5