hat2057ra Renesas Electronics Corporation., hat2057ra Datasheet
hat2057ra
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hat2057ra Summary of contents
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Cautions Keep safety first in your circuit designs! 1. Renesas Technology Corporation puts the maximum effort into making semiconductor products better and more reliable, but there is always the possibility that trouble may occur with them. Trouble with semiconductors may ...
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... Silicon N Channel Power MOS FET Features Low on-resistance Capable of 1.5 V gate drive Low drive current High density mounting Outline SOP HAT2057RA High Speed Power Switching MOS1 MOS2 ADE-208-1636 ( ...
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... HAT2057RA Absolute Maximum Ratings (Ta = 25°C) Item Drain to source voltage Gate to source voltage Drain current Drain peak current Body–drain diode reverse drain current Channel dissipation Channel dissipation Channel temperature Storage temperature Notes duty cycle 2. 1 Drive operation: When using the glass epoxy board (FR4 1.6 mm), PW 10s 3 ...
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... V — 0.80 1. — 40 — rr HAT2057RA Unit Test Conditions mA -3V 1mA DS D Note4 A ...
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... HAT2057RA Package Dimensions 8 1 0.75 Max 1.27 *0.42 ± 0.08 0.40 ± 0.06 *Dimension including the plating thickness Base material dimension Rev.0, Feb. 2003, page 4.90 5.3 Max 5 4 0.15 0. July, 2002 + 0.10 6.10 – 0.30 1.08 0˚ – 8˚ + 0.67 0.60 – 0.20 Hitachi Code FP-8DA JEDEC Conforms JEITA — Mass (reference value) 0.085 g ...
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... Tel : <886>-(2)-2718-3666 Fax : <886>-(2)-2718-8180 Telex : 23222 HAS-TP URL : http://semiconductor.hitachi.com.tw Copyright © Hitachi, Ltd., 2003. All rights reserved. Printed in Japan. HAT2057RA Hitachi Asia (Hong Kong) Ltd. Group III (Electronic Components) 7/F., North Tower World Finance Centre, Harbour City, Canton Road Tsim Sha Tsui, Kowloon Hong Kong Tel : < ...