hat2028rj Renesas Electronics Corporation., hat2028rj Datasheet - Page 4

• Manufacturer Part Number: hat2028rj
• Description: Silicon N Channel Power Mos Fet High Speed Power Switching
• Manufacturer: Renesas Electronics Corporation.

HAT2028R, HAT2028RJ
Rev.5.00 Sep 07, 2005 page 4 of 7
0.25
0.20
0.15
0.10
0.05
500
200
100
100
Static Drain to Source on State Resistance
50
20
10
80
60
40
20
0
–40
5
0
0.1
0
I
Reverse Drain Current I
Pulse Test
D
Case Temperature
Dynamic Input Characteristics
V
= 4 A
0.2
Body-Drain Diode Reverse
V
DS
10 V
Gate Charge
GS
0
2
= 4 V
vs. Temperature
I
D
Recovery Time
0.5
= 0.5 A, 1 A, 2 A
V
40
DD
4
di / dt = 50 A / µs
V
= 10 V
1
GS
0.5 A, 1 A, 2 A
25 V
50 V
80
= 0, Ta = 25°C
6
V
Qg (nc)
DD
2
Tc
= 50 V
DR
120
25 V
10 V
8
(°C)
V
5
(A)
GS
160
10
10
20
16
12
8
4
0
1000
1000
500
200
300
100
100
0.5
0.2
20
10
50
20
10
30
10
5
2
1
3
1
0.2
0.1
0
Drain to Source Voltage V
Forward Transfer Admittance vs.
0.2
Switching Characteristics
0.5
Typical Capacitance vs.
Drain to Source Voltage
10
Drain Current
Drain Current I
25°C
0.5
Drain Current
Tc = –25°C
1
20
V
PW = 3 µs, duty ≤ 1 %
75°C
GS
1
2
= 4 V, V
t r
30
t d(on)
2
I
D
D
t d(off)
V
Pulse Test
5
DS
V
f = 1 MHz
DD
(A)
(A)
t f
GS
= 10 V
40
DS
= 30 V
10
5
= 0
Coss
Ciss
Crss
(V)
10
20
50