hat2024r Renesas Electronics Corporation., hat2024r Datasheet - Page 2
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hat2024r
Manufacturer Part Number
hat2024r
Description
Silicon N Channel Power Mos Fet High Speed Power Switching
Manufacturer
Renesas Electronics Corporation.
Datasheet
1.HAT2024R.pdf
(8 pages)
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
HAT2024R
Manufacturer:
RENESAS
Quantity:
25 000
Part Number:
HAT2024R
Manufacturer:
RENESAS/瑞萨
Quantity:
20 000
Part Number:
hat2024r-E2
Manufacturer:
RENESAS/瑞萨
Quantity:
20 000
Part Number:
hat2024r-EL
Manufacturer:
HITACHI/日立
Quantity:
20 000
Part Number:
hat2024r-EL-E
Manufacturer:
RENESAS/瑞萨
Quantity:
20 000
HAT2024R
Absolute Maximum Ratings
Drain to source voltage
Gate to source voltage
Drain current
Drain peak current
Body-drain diode reverse drain current
Channel dissipation
Channel dissipation
Channel temperature
Storage temperature
Notes: 1. PW
Electrical Characteristics
Drain to source breakdown voltage
Gate to source breakdown voltage
Gate to source leak current
Zero gate voltage drain current
Gate to source cutoff voltage
Static drain to source on state resistance
Forward transfer admittance
Input capacitance
Output capacitance
Reverse transfer capacitance
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Body-drain diode forward voltage
Body-drain diode reverse recovery time
Note:
Rev.5.00 Sep 07, 2005 page 2 of 7
2. 1 Drive operation: When using the glass epoxy board (FR4 40
3. 2 Drive operation: When using the glass epoxy board (FR4 40
4. Pulse test
10 s, duty cycle
Item
Item
1%
V
V
Symbol
R
R
V
Coss
(BR) DSS
(BR) GSS
Crss
Ciss
t
t
I
GS (off)
I
DS (on)
DS (on)
|y
V
d (on)
d (off)
GSS
DSS
t
t
t
DF
rr
fs
r
f
|
I
D (pulse)
Pch
Pch
Symbol
V
V
Tstg
Min
Tch
1.0
3.5
30
I
—
—
—
—
—
—
—
—
—
—
—
—
—
I
DSS
GSS
DR
20
D
Note 2
Note 3
Note 1
0.078
0.05
Typ
310
220
100
190
5.5
0.9
17
25
60
50
—
—
—
—
—
0.065
Max
0.11
40
40
2.0
1.4
10
—
—
—
—
—
—
—
—
—
—
—
10
–55 to +150
1.6 mm), PW
1.6 mm), PW
Value
150
5.5
5.5
Unit
30
44
20
2
3
pF
pF
pF
ns
ns
ns
ns
ns
V
V
V
S
V
A
A
I
I
V
V
V
I
I
I
V
V
f = 1 MHz
V
V
I
I
di
D
G
D
D
D
F
F
GS
DS
DS
DS
GS
GS
DD
F
= 5.5 A, V
= 5.5 A, V
= 10 mA, V
= 3 A, V
= 3 A, V
= 3 A, V
= 100 A, V
/dt = 20 A/ s
= 30 V, V
= 10 V, I
= 10 V
= 16 V, V
= 0
= 4 V, I
10 s
10 s
Test Conditions
10 V
GS
GS
DS
D
GS
GS
D
= 10 V
= 10 V
= 4 V
= 3 A,
GS
GS
= 1 mA
DS
= 0
= 0
DS
Unit
= 0
= 0
(Ta = 25 C)
(Ta = 25 C)
W
W
V
V
A
A
A
= 0
C
C
= 0
Note 4
Note 4
Note 4
Note 4