hat2092r Renesas Electronics Corporation., hat2092r Datasheet - Page 4

• Manufacturer Part Number: hat2092r
• Description: Silicon N Channel Power Mos Fet High Speed Power Switching
• Manufacturer: Renesas Electronics Corporation.

HAT2092R
Rev.3.00 Jan. 13, 2005 page 4 of 7
100
20
-40
50
10
50
40
30
20
10
50
40
30
20
10
0
Static Drain to Source on State Resistance
0.1
0
V
I
D
DS
Pulse Test
V
Reverse Drain Current
0.2
GS
= 11 A
Dynamic Input Characteristics
Case Temperature
10 V
Body–Drain Diode Reverse
8
0
= 4.5 V
Gate Charge
0.5
vs. Temperature
Recovery Time
16
40
1
I
D
di/dt = 50 A/µs
V
V
= 2 A, 5 A
DD
GS
2
24
80
= 25 V
= 0, Ta = 25°C
2 A, 5 A, 10 A
Qg (nc)
10 V
5 V
V
Tc
DD
I
5
V
DR
120
GS
32
= 25 V
(°C)
10 A
10
10 V
(A)
5 V
160
40
20
20
16
12
8
4
0
10000
100
3000
1000
0.3
0.1
30
10
300
100
200
100
3
1
30
10
50
20
10
0.1
5
2
0.1
0
V
Rg = 4.7 Ω, duty < 1 %
Forward Transfer Admittance vs.
Drain to Source Voltage V
GS
0.3
0.2
= 10 V, V
10
Switching Characteristics
Typical Capacitance vs.
Drain to Source Voltage
Tc = -25°C
Drain Current I
Drain Current I
0.5
t f
1
Drain Current
25°C
20
DS
1
Coss
3
Crss
Ciss
t d(on)
= 10 V
2
30
t d(off)
75°C
10
V
Pulse Test
D
D
DS
V
f = 1 MHz
(A)
= 10 V
(A)
5
GS
30
40
DS
t r
= 0
10
(V)
100
50
20