hat2049t Renesas Electronics Corporation., hat2049t Datasheet - Page 5

• Manufacturer Part Number: hat2049t
• Description: Silicon N Channel Power Mos Fet High Speed Power Switching
• Manufacturer: Renesas Electronics Corporation.

500
200
100
50
20
10
50
40
30
20
10
5
0.1
0
I
V
di/dt = 20 A/µs
V
D
Reverse Drain Current
DS
GS
0.2
Dynamic Input Characteristics
= 8 A
Body–Drain Diode Reverse
4
= 0, Ta = 25°C
Gate Charge
0.5
Recovery Time
V
DD
8
V
V
DD
= 5 V
GS
1
10 V
20 V
= 20 V
12
10 V
Qg (nc)
5 V
2
I
DR
16
5
(A)
20
10
0
10
8
6
4
2
10000
3000
1000
100
500
200
100
300
30
10
50
20
10
5
0.1
0
Drain to Source Voltage V
0.2
t f
10
Switching Characteristics
Typical Capacitance vs.
Drain to Source Voltage
Drain Current
V
PW = 3 µs, duty < 1 %
0.5
t
GS
20
d(off)
t
Coss
Crss
Ciss
= 4 V, V
d(on)
1
r t
30
I
2
DD
D
V
f = 1 MHz
HAT2049T
GS
(A)
= 10 V
40
DS
= 0
5
(V)
50
10
5