hat2070r05 Renesas Electronics Corporation., hat2070r05 Datasheet
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hat2070r05
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hat2070r05 Summary of contents
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HAT2070R Silicon N Channel Power MOS FET Power Switching Features Capable of 4.5 V gate drive Low drive current High density mounting Low on-resistance typ ( (on) GS Outline RENESAS Package ...
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HAT2070R Absolute Maximum Ratings Item Drain to source voltage Gate to source voltage Drain current Drain peak current Body-drain diode reverse drain current Channel dissipation Channel to ambient thermal impedance Channel temperature Storage temperature Notes duty ...
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HAT2070R Main Characteristics Power vs. Temperature Derating 4.0 Test Condition: When using the glass epoxy board (FR4 40 × 40 × 1.6 mm), PW ≤ 3.0 2.0 1 100 Ambient Temperature Typical Output Characteristics 50 ...
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HAT2070R Static Drain to Source on State Resistance vs. Temperature 50 Pulse Test 4 – Case Temperature Body-Drain Diode Reverse Recovery Time 100 50 20 ...
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HAT2070R 0.5 0.1 0.01 0.001 0.0001 10 µ 100 µ Switching Time Test Circuit Vin Monitor D.U.T. Rg Vin 10 V Rev.4.00 Sep 07, 2005 page Reverse Drain Current vs. Source to ...
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HAT2070R Package Dimensions JEITA Package Code RENESAS Code P-SOP8-3.95 × 4.9-1.27 PRSP0008DD Index mark Ordering Information Part Name HAT2070R-EL-E 2500 pcs Note: For some grades, production may be ...
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Keep safety first in your circuit designs! 1. Renesas Technology Corp. puts the maximum effort into making semiconductor products better and more reliable, but there is always the possibility that trouble may occur with them. Trouble with semiconductors may lead ...