hat2201wp-el-e Renesas Electronics Corporation., hat2201wp-el-e Datasheet - Page 5

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hat2201wp-el-e

Manufacturer Part Number
hat2201wp-el-e
Description
Silicon N Channel Power Mos Fet Power Switching
Manufacturer
Renesas Electronics Corporation.
Datasheet
HAT2201WP
REJ03G1679-0300 Rev.3.00 May 27, 2008
Page 5 of 7
20
16
12
8
4
0
Source to Drain Voltage V
Reverse Drain Current vs.
Source to Drain Voltage
0.4
10 V
0.03
0.01
0.3
0.1
3
1
10
0.8
0.5
D = 1
V
GS
1.2
= 0 V, –5 V
Normalized Transient Thermal Impedance vs. Pulse Width
100
Pulse Test
1.6
SDF
(V)
2.0
1 m
Pulse Width PW (s)
10 m
50
40
30
20
10
P
0
25
DM
ch - c(t) = s (t)
ch - c = 8.33 C/ W, Tc = 25 C
100 m
Channel Temperature Tch (°C)
Maximum Avalanche Energy vs.
Channel Temperature Derating
50
PW
T
75
1
ch - c
Tc = 25 C
100
D =
I
V
duty < 0.1 %
Rg
AP
DD
PW
T
= 15 A
125
= 50 V
50
10
150

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