hat2200wp-el-e Renesas Electronics Corporation., hat2200wp-el-e Datasheet - Page 3

• Manufacturer Part Number: hat2200wp-el-e
• Description: Silicon N Channel Power Mos Fet Power Switching
• Manufacturer: Renesas Electronics Corporation.

HAT2200WP
Main Characteristics
REJ03G1678-0300 Rev.3.00 May 27, 2008
Page 3 of 7
250
200
150
100
40
30
20
10
20
16
12
50
0
8
4
0
Drain to Source Saturation Voltage vs.
0
Drain to Source Voltage V
Gate to Source Voltage V
Power vs. Temperature Derating
Typical Output Characteristics
Case Temperature Tc (°C)
6 V
Gate to Source Voltage
2
10 V
50
5
4
100
10
6
Pulse Test
Pulse Test
150
15
I
GS
8
DS
D
5.8 V
5.6 V
= 5 A
2 A
1 A
(V)
(V)
200
10
20
0.001
0.01
100
100
0.1
Static Drain to Source on State Resistance
50
20
10
10
20
16
12
2
1
1
8
4
5
0.1 0.3
0
1
Operation in
this area is
limited by R
Drain to Source Voltage V
Gate to Source Voltage V
Pulse Test
V
Pulse Test
Typical Transfer Characteristics
Maximum Safe Operation Area
DS
= 10 V
Tc = 75°C
2
Drain Current I
1
vs. Drain Current
DS(on)
3
4
10
10
6
30
25°C
V
–25°C
D
GS
100
(A)
= 8 V
10 s
10 V
8
GS
DS
300 1000
(V)
(V)
100
10