upa1701ag Renesas Electronics Corporation., upa1701ag Datasheet
upa1701ag
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upa1701ag Summary of contents
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N-CHANNEL POWER MOS FET DESCRIPTION The PA1701A is N-Channel MOS Field Effect Transistor designed for power management applications and Li-ion battery application. FEATURES 2.5 V gate drive and low on-resistance R = 27m (MAX 4 DS(on)1 ...
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ELECTRICAL CHARACTERISTICS (T CHARACTERISTICS Drain to Source On-state Resistance Gate to Source Cut-off Voltage Forward Transfer Admittance Drain Leakage Current Gate to Source Leakage Current Input Capacitance Output Capacitance Reverse Transfer Capacitance Turn-on Delay Time Rise Time Turn-off Delay Time ...
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TYPICAL CHARACTERISTICS (T A DERATING FACTOR OF FORWARD BIAS SAFE OPERATING AREA 100 100 120 140 160 T - Ambient Temperature - ˚C A FORWARD BIAS SAFE OPERATING AREA 100 I ...
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TRANSIENT THERMAL RESISTANCE vs. PULSE WIDTH 1 000 100 10 1 0.1 0.01 0.001 10 100 FORWARD TRANSFER ADMITTANCE vs. DRAIN CURRENT 100 25˚C A 25˚C 75˚C 125˚ Drain Current - ...
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DRAIN TO SOURCE ON-STATE RESISTANCE vs. CHANNEL TEMPERATURE 100 120 Channel Temperature - ...
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Data Sheet G12711EJ2V0DS PA1701A ...
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Data Sheet G12711EJ2V0DS PA1701A 7 ...
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The information in this document is current as of May, 2001. The information is subject to change without notice. For actual design-in, refer to the latest publications of NEC's data sheets or data books, etc., for the most up-to-date specifications ...