upa1756g Renesas Electronics Corporation., upa1756g Datasheet
upa1756g
Available stocks
Related parts for upa1756g
upa1756g Summary of contents
Page 1
DESCRIPTION This product is Dual N-Channel MOS Field Effect Transistor designed for power management application of notebook computers, and Li-ion battery application. FEATURES Dual MOS FET chips in small package 2.5-V gate drive type and low on-resistance ...
Page 2
ELECTRICAL CHARACTERISTICS (T CHARACTERISTICS Drain to Source On-state Resistance Gate to Source Cut-off Voltage Forward Transfer Admittance Drain Leakage Current Gate to Source Leakage Current Input Capacitance Output Capacitance Reverse Transfer Capacitance Turn-on Delay Time Rise Time Turn-off Delay Time ...
Page 3
TYPICAL CHARACTERISTICS (T A 1000 100 10 1 0.1 0.01 0.001 10 100 FORWARD TRANSFER ADMITTANCE vs. DRAIN CURRENT 100 ˚ -50 A ˚C -25 ˚ 125 150 1 0 ...
Page 4
DRAIN TO SOURCE ON-STATE RESISTANCE vs. CHANNEL TEMPERATURE 100 T - Channel Temperature -˚C ch CAPACITANCE vs. DRAIN TO SOURCE VOLTAGE 10 000 1 000 100 10 0.1 1 ...
Page 5
DERATING FACTOR OF FORWARD BIAS SAFE OPERATING AREA 100 100 120 140 160 T - Ambient Temperature - ˚C A FORWARD BIAS SAFE OPERATING AREA 100 Mounted on ceramic substrate of ...
Page 6
Data Sheet D12909EJ2V0DS PA1756 ...
Page 7
Data Sheet D12909EJ2V0DS PA1756 7 ...
Page 8
The information in this document is current as of May, 2001. The information is subject to change without notice. For actual design-in, refer to the latest publications of NEC's data sheets or data books, etc., for the most up-to-date specifications ...