upa1816 Renesas Electronics Corporation., upa1816 Datasheet - Page 5

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upa1816

Manufacturer Part Number
upa1816
Description
P-channel Mos Field Effect Transistor For Switching
Manufacturer
Renesas Electronics Corporation.
Datasheet
10000
1000
100
20
15
10
40
30
20
10
5
0
CAPACITANCE vs. DRAIN TO SOURCE VOLTAGE
-0.01
DRAIN TO SOURCE ON-STATE RESISTANCE vs.
DRAIN CURRENT
-0.01
DRAIN TO SOURCE ON-STATE RESISTANCE vs.
DRAIN CURRENT
-0.1
V
Pulsed
V
Pulsed
GS
GS
= 2.5 V
= 4.5 V
V
DS
-0.1
-0.1
- Drain to Source Voltage - V
I
I
T
D
D
A
-1
- Drain Current - A
- Drain Current - A
= 125°C
T
75°C
25°C
25°C
A
-1
-1
= 125°C
75°C
25°C
25°C
-10
V
f = 1.0 MHz
-10
-10
C
C
C
GS
iss
oss
rss
= 0 V
Data Sheet G16252EJ1V0DS
-100
-100
-100
10000
1000
100
40
30
20
10
20
15
10
10
0
5
-0.01
1
-0.01
-0.01
DRAIN TO SOURCE ON-STATE RESISTANCE vs.
DRAIN CURRENT
DRAIN TO SOURCE ON-STATE RESISTANCE vs.
DRAIN CURRENT
V
Pulsed
V
Pulsed
GS
T
GS
t
A
t
t
t
d(on)
f
r
d(off)
= 1.8 V
= 125°C
SWITCHING CHARACTERISTICS
= 4.0 V
75°C
25°C
25°C
-0.1
-0.1
I
I
I
D
D
D
-0.1
- Drain Current - A
- Drain Current - A
- Drain Current - A
T
A
-1
-1
= 125°C
75°C
25°C
25°C
-1
V
V
R
DD
GS
G
-10
-10
= 10
= 10 V
= 4.0 V
PA1816
-100
-100
-10
5

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