upa1818 Renesas Electronics Corporation., upa1818 Datasheet - Page 2

• Manufacturer Part Number: upa1818
• Description: P-channel Mos Field Effect Transistor For Switching
• Manufacturer: Renesas Electronics Corporation.

ELECTRICAL CHARACTERISTICS (T
2
V
Zero Gate Voltage Drain Current
Gate Leakage Current
Gate Cut-off Voltage
Forward Transfer Admittance
Drain to Source On-state Resistance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Turn-on Delay Time
Rise Time
Turn-off Delay Time
Fall Time
Total Gate Charge
Gate to Source Charge
Gate to Drain Charge
Body Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
GS ( )
0
TEST CIRCUIT 1 SWITCHING TIME
Duty Cycle
PG.
= 1 s
CHARACTERISTICS
R
1%
G
D.U.T.
R
V
L
DD
V
Wave Form
V
Wave Form
GS
DS
SYMBOL
R
R
R
V
V
| y
C
t
t
Q
Q
I
I
DS(on)1
DS(on)2
DS(on)3
C
GS(off)
C
d(on)
d(off)
Q
F(S-D)
Q
A
GSS
DSS
t
t
t
oss
rss
GS
GD
rr
V
V
fs
iss
r
f
G
rr
V
= 25°C)
GS( )
DS( )
|
0
DS
0
Data Sheet G16254EJ1V0DS
10 %
t
d(on)
90 %
V
V
V
V
V
V
V
V
V
f = 1.0 MHz
V
V
R
V
V
I
I
I
di/dt = 100 A / s
D
F
F
DS
GS
DS
DS
GS
GS
GS
DS
GS
DD
GS
DD
GS
G
t
= 10 A
= 10 A, V
= 10 A, V
on
= 10
= 20 V, V
= 10 V, I
= 10 V, I
= 10 V
=
= 4.5 V, I
= 4.0 V, I
= 2.5 V, I
= 0 V
= 10 V, I
= 4.0 V
= 16 V
= 4.0 V
10 % 10 %
t
r
m
V
12 V, V
t
GS
TEST CONDITIONS
d(off)
GS
GS
D
D
D
= 0 V
= 0 V
D
D
D
t
GS
off
= 1.0 mA
= 5.0 A
= 5.0 A
90 %
DS
= 5.0 A
= 5.0 A
= 5.0 A
= 0 V
90 %
t
f
= 0 V
TEST CIRCUIT 2 GATE CHARGE
PG.
MIN.
12
0.5
I
G
= 2 mA
50
TYP.
2200
12.1
12.7
18.8
0.82
510
310
207
139
193
5.0
6.0
24
23
20
44
28
1.1
D.U.T.
MAX.
m
15.2
16
25
1.0
1.5
10
PA1818
UNIT
m
m
m
pF
pF
pF
nC
nC
nC
nC
ns
ns
ns
ns
ns
V
S
V
A
A
R
V
DD
L