upa1815gr-9jg Renesas Electronics Corporation., upa1815gr-9jg Datasheet - Page 3

• Manufacturer Part Number: upa1815gr-9jg
• Description: P-channel Mos Field Effect Transistor For Switching
• Manufacturer: Renesas Electronics Corporation.

TYPICAL CHARACTERISTICS (T
1.2
1.0
0.8
0.6
0.4
30
20
10
100
0
50
80
60
40
20
0.0
0
V
I
D
GATE TO SOURCE CUT-OFF VOLTAGE vs.
CHANNEL TEMPERATURE
DS
= 1 mA
DERATING FACTOR OF FORWARD BIAS
SAFE OPERATING AREA
= 10 V
T
V
DRAIN CURRENT vs.
DRAIN TO SOURCE VOLTAGE
ch
30
DS
T
A
0.2
0
- Channel Temperature - ˚C
- Drain to Source Voltage - V
- Ambient Temperature - ˚C
60
50
0.4
V
90
GS
= 4.5 V
A
100
3.3 V
2.5 V
4.0 V
= 25 C)
0.6
120
Data Sheet D13805EJ3V0DS
150
150
0.8
0.00001
0.0001
0.01
0.001
100
100
0.01
0.1
10
0.01
1
100
1
0.01
0.1
10
0
0.1
1
V
FORWARD TRANSFER ADMITTANCE Vs.
DRAIN CURRENT
DS
V
T
Single Pulse
Mounted on Ceramic
Substrate of 50cm x 1.1mm
FORWARD BIAS SAFE OPERATING AREA
A
DS =
= 25 ˚C
= 10V
TRANSFER CHARACTERISTICS
T
V
V
10 V
A
GS
I
DS
D
0.5
= 25 ˚C
0.1
(DC)
- Gate to Sorce Voltage - V
- Drain to Source Voltage - V
I
25 ˚C
D
I
D
- Drain Current - A
2
1
(pulse)
125 ˚C
75 ˚C
1.0
1
10
1.5
10
2.0
100
PA1815
100
3