upa1810 Renesas Electronics Corporation., upa1810 Datasheet - Page 4

• Manufacturer Part Number: upa1810
• Description: P-channel Mos Field Effect Transistor For Switching
• Manufacturer: Renesas Electronics Corporation.

4
100
20
80
60
40
40
20
1000
80
60
100
DRAIN TO SOURCE ON-STATE RESISTANCE vs.
GATE TO SOURCE VOLTAGE
DRAIN TO SOURCE ON-STATE RESISTANCE vs.
DRAIN CURRENT
0.01
0
10
V
0.1
GS
= 4.0 V
V
GS
SWITCHING CHARACTERISTICS
2
0.1
- Gate to Source Voltage - V
I
T
D
A
- Drain Current - A
=
I
D
125˚C
- Drain Current - A
75˚C
25˚C
25˚C
4
1
1
6
V
V
R
10
DD
GS
G
I
D
(
= 5
= 10 V
on
= 2.0 A
8
) = 4.0 V
td
td
tr
tf
Data Sheet D11819EJ1V0DS00
(off)
(on)
100
10
10
100
10000
0.1
100
1000
10
80
60
40
20
1
100
0.4
SOURCE TO DRAIN DIODE FORWARD VOLTAGE
10
50
DRAIN TO SOURCE ON-STATE RESISTANCE vs.
CHANNEL TEMPERATURE
1
I
D
= 2.0 A
V
F(S-D)
T
V
ch
CAPACITANCE vs. DRAIN TO
SOURCE VOLTAGE
0.6
DS
0
- Channel Temperature -˚C
- Drain to Source Voltage - V
- Source to Drain Voltage - V
0.8
50
10
C
C
C
oss
iss
rss
100
V
1.0
GS
= 2.5 V
V
f = 1 MHz
4.0 V
GS
= 0V
150
1.2
PA1810
100