upa1811 Renesas Electronics Corporation., upa1811 Datasheet - Page 2

• Manufacturer Part Number: upa1811
• Description: P-channel Mos Field Effect Transistor For Switching
• Manufacturer: Renesas Electronics Corporation.

• • • •
• • • •
ELECTRICAL CHARACTERISTICS (T
2
V
Zero Gate Voltage Drain Current
Gate Leakage Current
Gate Cut-off Voltage
Forward Transfer Admittance
Drain to Source On-state Resistance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Turn-on Delay Time
Rise Time
Turn-off Delay Time
Fall Time
Total Gate Charge
Gate to Source Charge
Gate to Drain Charge
Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
GS
0
TEST CIRCUIT 1 SWITCHING TIME
Duty Cycle
PG.
( )
= 1 s
CHARACTERISTICS
R
1 %
G
D.U.T.
R
V
DD
L
I
Wave Form
V
Wave Form
D
GS
SYMBOL
R
R
R
V
V
| y
t
t
I
DS(on)1
DS(on)2
DS(on)3
C
Q
Q
I
C
C
GS(off)
A
d(on)
d(off)
Q
F(S-D)
Q
DSS
GSS
t
t
t
oss
rss
GS
GD
rr
fs
iss
r
f
G
rr
= 25 °C)
V
I
|
D
Data Sheet D11820EJ1V0DS00
GS
0
0
( )
10 %
10 %
t
d(on)
( )
V
V
V
V
V
V
V
V
V
f = 1 MHz
V
I
V
R
V
I
V
I
I
di/dt = 100 A/ S
D
D
F
F
DS
GS
DS
DS
GS
GS
GS
DS
GS
DD
GS(on)
G
DD
GS
= –2.0 A
= –4.0 A
= 4.0 A, V
= 4.0 A, V
= 5
90 %
t
= –20 V, V
= –10 V, I
= –10 V, I
= –10 V
on
= ±12 V, V
= –4.5 V, I
= –4.0 V, I
= –2.5 V, I
= 0 V
= –10 V
= –10 V
= –4.0 V
t
= –4.0 V
r
V
I
D
TEST CONDITIONS
GS
t
d(off)
(on)
GS
GS
D
D
D
D
D
GS
DS
= 0 V
= 0 V
t
= –1 mA
= –2.0 A
off
= –2.0 A
= –2.0 A
= –2.0 A
90 %
90 %
= 0 V
= 0 V
t
10 %
f
TEST CIRCUIT 2 GATE CHARGE
PG.
MIN.
–0.5
2.5
I
G
= 2 mA
50
TYP.
1160
–0.9
0.74
680
210
100
6.8
42
46
73
40
90
60
36
16
77
69
5
D.U.T.
MAX.
–1.5
–10
±10
120
75
80
UNIT
PA1811
m
m
m
nC
nC
nC
nC
pF
pF
pF
ns
ns
ns
ns
ns
V
S
V
A
A
R
V
L
DD