upa1806 Renesas Electronics Corporation., upa1806 Datasheet - Page 4

• Manufacturer Part Number: upa1806
• Description: N-channel Mos Field Effect Transistor For Switching
• Manufacturer: Renesas Electronics Corporation.

4
2.4
2.2
1.8
1.6
1.4
1.2
20
16
12
60
50
40
30
20
10
DRAIN TO SOURCE ON-STATE RESISTANCE vs.
CHANNEL TEMPERATURE
8
4
0
2
0
-50
-50
0
I
Pulsed
Pulsed
D
= 6.0 A
DRAIN CURRENT vs.
DRAIN TO SOURCE VOLTAGE
V
V
T
GATE CUT-OFF VOLTAGE vs.
CHANNEL TEMPERATURE
T
GS
DS
ch
ch
- Channel Temperature - C
0.2
= 10 V
- Drain to Source Voltage - V
- Channel Temperature - °C
0
0
V
GS
= 4.0 V
4.5 V
0.4
50
50
4.5 V
V
I
100
100
D
0.6
DS
10 V
= 1.0 mA
= 10 V
4.0 V
Data Sheet G16248EJ1V0DS
150
150
0.8
0.0001
0.001
100
0.01
0.1
DRAIN TO SOURCE ON-STATE RESISTANCE vs.
GATE TO SOURCE VOLTAGE
20
16
12
100
10
0.1
8
4
0
10
1
0.01
1
0
FORWARD TRANSFER CHARACTERISTICS
FORWARD TRANSFER ADMITTANCE vs.
DRAIN CURRENT
1
V
Pulsed
V
Pulsed
DS
DS
V
= 10 V
GS
V
2
= 10 V
1.5
GS
0.1
- Gate to Source Voltage - V
I
- Gate to Source Voltage - V
D
- Drain Current - A
4
2
1
I
D
= 6.0 A
6
2.5
T
A
= 25°C
T
10
A
125°C
8
25°C
75°C
= 125°C
Pulsed
PA1806
3
75°C
25°C
25°C
100
10
3.5