upa1804 Renesas Electronics Corporation., upa1804 Datasheet - Page 3

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upa1804

Manufacturer Part Number
upa1804
Description
N-channel Mos Field Effect Transistor For Switching
Manufacturer
Renesas Electronics Corporation.
Datasheet
TYPICAL CHARACTERISTICS (T
100
2.0
2.5
1.5
80
60
40
20
30
25
20
15
10
0
5
0
50
GATE TO SOURCE CUTOFF VOLTAGE vs.
CHANNEL TEMPERATURE
DERATING FACTOR OF FORWARD BIAS
SAFE OPERATING AREA
T
30
DRAIN CURRENT vs.
DRAIN TO SOURCE VOLTAGE
0.2
T
ch
V
A
0
- Channel Temperature - ˚C
DS
- Ambient Temperature - ˚C
- Drain to Source Voltage - V
60
0.4
50
90
4.5 V
V
0.6
GS
A
= 10 V
100
= 25°C)
120
V
I
D
0.8
DS
= 1 mA
= 10 V
Data Sheet D13868EJ2V0DS
150
150
1.0
0.00001
0.0001
0.001
0.01
100
0.01
0.01
0.1
100
10
100
0.1
0.1
10
1
10
1
1
0.1
V
V
DRAIN CURRENT
T
Single Pulse
Mounted on Ceramic
Substrate of 50cm x 1.1mm
DS
FORWARD TRANSFER ADMITTANCE Vs.
FORWARD BIAS SAFE OPERATING AREA
A
DS
= 25˚C
= 10 V
1.0
= 10 V
TRANSFER CHARACTERISTICS
V
2
DS
125˚C
0.1
25˚C
75˚C
V
I
GS
D(DC)
- Drain to Source Voltage - V
- Gate to Sorce Voltage - V
I
1
D(pulse)
2.0
I
D
- Drain Current - A
T
1
A
= 25 ˚C
125˚C
25˚C
75˚C
3.0
10
10
4.0
PA1804
100
100
3

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