upa1803 Renesas Electronics Corporation., upa1803 Datasheet - Page 4

• Manufacturer Part Number: upa1803
• Description: N-channel Mos Field Effect Transistor For Switching
• Manufacturer: Renesas Electronics Corporation.

4
10000
1000
100
10
20
20
15
10
10
5
0.01
0
0
DRAIN TO SOURCE ON-STATE RESISTANCE vs.
CHANNEL TEMPERATURE
−50
0.1
I
V
D
V
f = 1 MHz
GS
GS
= 4.0 A
= 4.5 V
DRAIN TO SOURCE ON-STATE
RESISTANCE vs. DRAIN CURRENT
= 0 V
T
0.1
CAPACITANCE vs. DRAIN TO
SOURCE VOLTAGE
ch
0
V
- Channel Temperature -
I
D
DS
1
- Drain Current - A
- Drain Source Voltage - V
1
50
T
A
10
= 125
V
−25
100
10
75
25
GS
°C
°C
°C
°C
= 4.5 V
°C
10 V
C
C
C
Data Sheet G13803EJ3V0DS
iss
rss
oss
100
100
150
1000
100
50
30
10
40
20
10
1
20
15
10
DRAIN TO SOURCE ON-STATE RESISTANCE vs.
GATE TO SOURCE VOLTAGE
0
5
0.01
0.1
0
V
V
R
V
DD
GS
G
GS
= 10 Ω
= 15 V
= 10V
SWITCHING CHARACTERISTICS
= 10 V
DRAIN TO SOURCE ON-STATE
RESISTANCE vs. DRAIN CURRENT
V
4
GS
0.1
- Gate to Source Voltage - V
I
I
D
D
- Drain Current - A
- Drain Current - A
8
t
f
1
1
t
d(off)
12
10
T
I
D
A
16
= 4.0 A
= 125
−25
75
25
μ
t
d(on)
t
°C
°C
°C
°C
r
PA1803
100
10
20