upa1858 Renesas Electronics Corporation., upa1858 Datasheet - Page 5

• Manufacturer Part Number: upa1858
• Description: P-channel Mos Field Effect Transistor For Switching
• Manufacturer: Renesas Electronics Corporation.

60
50
40
30
20
10
1000
0
- 0.01
100
60
50
40
30
20
10
10
0
- 0.01
- 0.1
V
Pulsed
GS
V
Pulsed
DRAIN TO SOURCE ON-STATE
RESISTANCE vs. DRAIN CURRENT
GS
= 4.5 V
DRAIN TO SOURCE ON-STATE
RESISTANCE vs. DRAIN CURRENT
= 2.5 V
t
- 0.1
SWITCHING CHARACTERISTICS
d(off)
t
- 0.1
T
f
A
I
I
I
D
75°C
25 C
D
D
= 125°C
- Drain Current - A
- Drain Current - A
- Drain Current - A
25 C
- 1
- 1
- 1
T
A
= 125 C
V
V
R
75 C
25 C
25 C
- 10
DD
GS
G
= 10
- 10
t
= 10 V
= 4.0 V
r
t
d(on)
- 100
Data Sheet G16276EJ1V0DS
- 100
- 10
60
50
40
30
20
10
0
- 0.01
10000
1000
0.01
100
100
0.1
10
V
Pulsed
1
GS
- 0.1
0.4
DRAIN TO SOURCE ON-STATE
RESISTANCE vs. DRAIN CURRENT
= 4.0 V
V
Pulsed
V
f = 1.0 M H z
GS
- 0.1
G S
V
= 0 V
V
F(S-D)
= 0 V
CAPACITANCE vs.
DRAIN TO SOURCE VOLTAGE
SOURCE TO DRAIN DIODE
FORWARD VOLTAGE
DS
0.6
I
- Drain to Source Voltage - V
D
- Source to Drain Voltage - V
- Drain Current - A
- 1
- 1
T
A
0.8
= 125 C
75 C
25 C
25 C
- 10
- 10
1
PA1858
C
C
C
- 100
iss
oss
rss
- 100
1.2
5