upa1854 Renesas Electronics Corporation., upa1854 Datasheet - Page 5
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upa1854
Manufacturer Part Number
upa1854
Description
P-channel Mos Field Effect Transistor For Switching
Manufacturer
Renesas Electronics Corporation.
Datasheet
1.UPA1854.pdf
(8 pages)
10000
1000
100
10
6
5
4
3
2
1
0
0.1
0
V
V
R
I
DD
GS
G
D
(
= 10
DYNAMIC INPUT CHARACTERISTICS
= -3.0 A
1
= 10V
on
SWITCHING CHARACTERISTICS
) = 4.0V
2
1000
100
Q
I
0.1
D
10
3
V
G
1
- Drain Current - A
1m
DD
- Gate Charge - nC
= -10 V
4
5
1
6
10m
TRANSIENT THERMAL RESISTANCE vs. PULSE WIDTH
7
td
td
tf
tr
8
(off)
(on)
9
100m
Data Sheet D13295EJ2V0DS
10
10
PW - Pulse Width - S
1
0.01
100
0.1
10
1
0.4
SOURCE TO DRAIN DIODE FORWARD VOLTAGE
10
Mounted on Ceramic Substrate
of 50cm x 1.1mm
Single Pulse
P
D
(FET1) : P
V
F(S-D)
2
0.6
100
D
(FET2) = 1:1
- Source to Drain Voltage - V
62.5 ˚C/W
0.8
1000
V
GS
= 0 V
1.0
PA1854
1.2
5