upa1850gr-9jg Renesas Electronics Corporation., upa1850gr-9jg Datasheet - Page 2

• Manufacturer Part Number: upa1850gr-9jg
• Description: P-channel Mos Field Effect Transistor For Switching
• Manufacturer: Renesas Electronics Corporation.

ELECTRICAL CHARACTERISTICS (T
2
V
Drain Cut-off Current
Gate Leakage Current
Gate to Source Cut-off Voltage
Forward Transfer Admittance
Drain to Source On-state Resistance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Turn-on Delay Time
Rise Time
Turn-off Delay Time
Fall Time
Total Gate Charge
Gate to Source Charge
Gate to Drain Charge
Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
GS
0
TEST CIRCUIT 1 SWITCHING TIME
Duty Cycle
PG.
( )
= 1 s
CHARACTERISTICS
R
1 %
G
D.U.T.
R
V
L
DD
I
Wave Form
V
Wave Form
D
GS
SYMBOL
R
R
R
V
V
| y
t
t
Q
I
I
DS(on)1
DS(on)2
DS(on)3
C
C
Q
GS(off)
C
Q
A
d(on)
d(off)
F(S-D)
Q
DSS
GSS
t
t
t
oss
GS
GD
rr
fs
iss
rss
r
f
G
rr
= 25 °C)
V
I
|
D
Data Sheet D11818EJ2V0DS00
GS
0
0
( )
10 %
10 %
t
( )
d(on)
V
V
V
V
V
V
V
V
V
f = 1 MHz
V
I
V
R
V
I
V
I
I
di/dt = 10 A / s
D
D
F
F
DS
GS
DS
DS
GS
GS
GS
DS
GS
DD
GS(on)
DD
GS
G
= –1.5 A
= –2.5 A
= 2.5 A, V
= 2.5 A, V
= 10
t
90 %
= –12 V, V
=
= –10 V, I
= –10 V, I
= –4.5 V, I
= –4.0 V, I
= –2.5 V, I
= –10 V
= 0 V
= –10 V
= –10 V
= –4.0 V
on
t
#
= –4.0 V
r
V
10 V, V
I
D
GS
t
TEST CONDITIONS
d(off)
(on)
GS
GS
D
D
D
D
D
GS
= 0 V
= 0 V
t
DS
= –1 mA
= –1.5 A
off
= –1.5 A
= –1.5 A
= –1.5 A
90 %
90 %
= 0 V
t
= 0 V
10 %
f
TEST CIRCUIT 2 GATE CHARGE
PG.
MIN.
–0.5
2.0
I
G
= 2 mA
50
TYP.
–1.0
0.80
127
260
300
120
420
520
430
750
950
5.0
80
85
45
12
2
5
D.U.T.
MAX.
–1.5
–10
#
115
130
200
10
UNIT
PA1850
m
m
m
pF
pF
pF
nC
nC
nC
nC
ns
ns
ns
ns
ns
V
S
V
A
A
R
V
DD
L