upa1851gr-9jg Renesas Electronics Corporation., upa1851gr-9jg Datasheet
![no-image](/images/manufacturer_photos/0/5/561/renesas_electronics_corporation__sml.jpg)
upa1851gr-9jg
Related parts for upa1851gr-9jg
upa1851gr-9jg Summary of contents
Page 1
P-CHANNEL MOS FIELD EFFECT TRANSISTOR DESCRIPTION The PA1851 is a switching device which can be driven directly by a 4.0 V power source. - The PA1851 features a low on-state resistance and excellent switching characteristics, and is suitable for applications ...
Page 2
ELECTRICAL CHARACTERISTICS (T CHARACTERISTICS Drain Cut-off Current Gate Leakage Current Gate Cut-off Voltage Forward Transfer Admittance Drain to Source On-state Resistance Input Capacitance Output Capacitance Reverse Transfer Capacitance Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Total Gate ...
Page 3
TYPICAL CHARACTERISTICS (T DERATING FACTOR OF FORWARD BIAS SAFE OPERATING AREA 100 Ambient Temperature - ˚C A DRAIN CURRENT vs. DRAIN TO SOURCE VOLTAGE ...
Page 4
DRAIN TO SOURCE ON-STATE RESISTANCE vs. DRAIN CURRENT 400 300 T = 125˚C A 75˚C 200 25˚C 25˚C 100 Drain Current - A D DRAIN TO SOURCE ON-STATE RESISTANCE vs. ...
Page 5
SWITCHING CHARACTERISTICS 1000 d(on) 100 t d(off GS(on 0 Drain Current - A D DYNAMIC INPUT CHARACTERISTICS 2.5 ...
Page 6
Data Sheet D12733EJ2V0DS00 PA1851 ...
Page 7
Data Sheet D12733EJ2V0DS00 PA1851 7 ...
Page 8
The information in this document is subject to change without notice. Before using this document, please confirm that this is the latest version. No part of this document may be copied or reproduced in any form or by any means ...