upa1872gr-9jg Renesas Electronics Corporation., upa1872gr-9jg Datasheet - Page 5

• Manufacturer Part Number: upa1872gr-9jg
• Description: N-channel Mos Field Effect Transistor For Switching
• Manufacturer: Renesas Electronics Corporation.

10000
1000
0.01
100
100
0.1
10
10
1
0.4
0.1
SOURCE TO DRAIN DIODE FORWARD VOLTAGE
V
GS
= 0 V
V
V
CAPACITANCE vs. DRAIN TO
SOURCE VOLTAGE
F(S-D)
DS
0.6
- Drain to Source Voltage - V
- Source to Drain Voltage - V
1000
0.1
1
100
0.001
10
1
Single Pulse
P
0.8
D
(FET1) : P
10
0.01
TRANSIENT THERMAL RESISTANCE vs. PULSE WIDTH
D
(FET2) = 1:1
1.0
C
C
C
f = 1 MHz
V
oss
rss
iss
GS
Data Sheet G15622EJ1V0DS
= 0 V
100
0.1
1.2
PW - Pulse Width - s
1
Mounted on Ceramic Board of 50 cm
1000
Mounted on FR-4 Board of 25 cm
100
10
4
3
2
1
0
5
0.1
0
DYNAMIC INPUT/OUTPUT CHARACTERISTICS
I
D
V
V
R
t
t
t
d (on)
= 10 A
r
DD
GS
G
f
= 10
10
= 10 V
= 4.0 V
SWITCHING CHARACTERISTICS
4
62.5˚C/W
125˚C/W
t
d (off)
Q
I
G
D
V
1
- Gate Charge - nC
DD
- Drain Current - A
10 V
8
100
= 16 V
2
x 1.6 mm
2
x 1.1 mm
12
10
1000
16
PA1872
100
20
5