upa1872bgr-9jg Renesas Electronics Corporation., upa1872bgr-9jg Datasheet - Page 5

• Manufacturer Part Number: upa1872bgr-9jg
• Description: N-channel Mos Field Effect Transistor For Switching
• Manufacturer: Renesas Electronics Corporation.

10000
1000
100
CAPACITANCE vs. DRAIN TO SOURCE VOLTAGE
DRAIN TO SOURCE ON-STATE RESISTANCE vs.
DRAIN CURRENT
40
30
20
10
40
30
20
10
10
DRAIN TO SOURCE ON-STATE RESISTANCE vs.
GATE TO SOURCE VOLTAGE
0
0
0.1
0.1
0
T
A
= 125°C
V
V
2
−25°C
DS
GS
75°C
25°C
- Drain to Source Voltage - V
- Gate to Source Voltage - V
I
D
- Drain Current - A
1
4
1
6
10
10
8
V
Pulsed
V
f = 1.0 MHz
GS
GS
I
Pulsed
D
C
C
C
= 0 V
= 3.1 V
= 5.0 A
10
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Data Sheet G16742EJ1V0DS
100
100
12
1000
DRAIN TO SOURCE ON-STATE RESISTANCE vs.
CHANNEL TEMPERATURE
DRAIN TO SOURCE ON-STATE RESISTANCE vs.
DRAIN CURRENT
40
30
20
10
100
40
30
20
10
0
10
0
-50
0.1
0.1
T
A
SWITCHING CHARACTERISTICS
V
= 125°C
GS
T
t
−25°C
ch
d(off)
t
t
t
75°C
25°C
= 2.5 V
f
r
d(on)
- Channel Temperature - °C
0
3.1 V
4.0 V
4.5 V
I
D
I
D
- Drain Current - A
- Drain Current - A
1
50
1
10
V
V
R
DD
GS
G
100
V
Pulsed
= 10 Ω
µ
I
Pulsed
GS
= 10.0 V
= 4.0 V
D
= 5.0 A
= 2.5 V
PA1872B
150
100
10
5