upa1870bgr-9jg Renesas Electronics Corporation., upa1870bgr-9jg Datasheet - Page 4

• Manufacturer Part Number: upa1870bgr-9jg
• Description: N-channel Mos Field Effect Transistor For Switching
• Manufacturer: Renesas Electronics Corporation.

4
DRAIN TO SOURCE ON-STATE RESISTANCE vs.
DRAIN CURRENT
50
40
30
20
10
1.5
0.5
25
20
15
10
0
0.01
5
0
1
-50
0
Pulsed
T
DRAIN CURRENT vs.
DRAIN TO SOURCE VOLTAGE
GATE CUT-OFF VOLTAGE vs.
CHANNEL TEMPERATURE
A
V
= 125°C
T
DS
ch
0.1
75°C
25°C
25°C
0.1
- Drain to Source Voltage - V
- Channel Temperature - C
0
I
D
- Drain Current - A
2.5 V
0.2
1
50
V
GS
= 4.5 V
0.3
100
10
V
Pulsed
V
I
D
GS
DS
= 1.0 mA
0.4
= 4.5 V
4.0 V
= 10.0 V
Data Sheet G16741EJ1V0DS
100
150
0.5
0.0001
0.001
DRAIN TO SOURCE ON-STATE RESISTANCE vs.
DRAIN CURRENT
100
50
40
30
20
0.01
0.1
1 0
100
10
0
0.1
10
1
FORWARD TRANSFER CHARACTERISTICS
0.01
1
0.01
0.5
FORWARD TRANSFER ADMITTANCE vs.
DRAIN CURRENT
V
Pulsed
V
Pulsed
DS
DS
= 10.0 V
= 10.0 V
T
V
A
GS
= 125°C
25°C
25°C
75°C
0.1
- Gate to Source Voltage - V
I
I
D
D
1
- Drain Current - A
- Drain Current - A
0.1
1
1.5
T
A
= 25°C
1
125°C
25°C
75°C
T
1 0
A
V
Pulsed
2
GS
= 125°C
= 4.0 V
PA1870B
75°C
25°C
25°C
1 00
10
2.5