upa1820 Renesas Electronics Corporation., upa1820 Datasheet - Page 4

• Manufacturer Part Number: upa1820
• Description: N-channel Mos Field Effect Transistor For Switching
• Manufacturer: Renesas Electronics Corporation.

4
DRAIN TO SOURCE ON-STATE RESISTANCE vs.
CHANNEL TEMPERATURE
80
70
60
50
40
30
20
10
1.2
1.0
0.8
0.6
0.4
20
15
10
0
5
0
-50
0
-50
V
I
Pulsed
4.5 V
D
DRAIN CURRENT vs.
DRAIN TO SOURCE VOLTAGE
GS
= 6.0 A
V
T
T
GATE CUT-OFF VOLTAGE vs.
CHANNEL TEMPERATURE
=
DS
ch
ch
0.5
- Channel Temperature - C
- Drain to Source Voltage - V
- Channel Temperature - C
0
V
0
4.0 V
GS
= 2.5 V
1
4.0 V
50
50
1.5
2.5 V
100
V
I
D
100
DS
= 1.0 m A
2
Pulsed
= 10 V
4.5 V
150
2.5
Data Sheet G16274EJ1V0DS
150
DRAIN TO SOURCE ON-STATE RESISTANCE vs.
GATE TO SOURCE VOLTAGE
20
15
10
0 .00 01
100
0.1
5
0
0 .00 1
10
0 .01
1
1 00
0.01
0
0 .1
1 0
FORWARD TRANSFER CHARACTERISTICS
FORWARD TRANSFER ADMITTANCE vs.
DRAIN CURRENT
1
T
V
0
A
GS
V
P u lsed
= 25 C
- Gate to Source Voltage - V
D S
2
125 C
V
25 C
75 C
GS
0.1
= 10 V
I
D
0 .5
- Drain Current - A
- Gate to Source Voltage - V
4
1
1
6
1 .5
V
Pulsed
I
Pulsed
10
DS
D
8
T
= 6.0 A
= 10 V
A
PA1820
= 12 5 C
2
7 5 C
2 5 C
2 5 C
10
100
2 .5