upa1911 Renesas Electronics Corporation., upa1911 Datasheet - Page 2

• Manufacturer Part Number: upa1911
• Description: P-channel Mos Field Effect Transistor For Switching
• Manufacturer: Renesas Electronics Corporation.

ELECTRICAL CHARACTERISTICS (T
TEST CIRCUIT 1 SWITCHING TIME
2
V
Zero Gate Voltage Drain Current
Gate Leakage Current
Gate Cut-off Voltage
Forward Transfer Admittance
Drain to Source On-state Resistance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Turn-on Delay Time
Rise Time
Turn-off Delay Time
Fall Time
Total Gate Charge
Gate to Source Charge
Gate to Drain Charge
Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
0
GS
Duty Cycle
PG.
= 1 s
CHARACTERISTICS
R
G
R
= 10
1 %
G
D.U.T.
R
V
DD
L
I
Wave Form
V
Wave Form
D
GS
SYMBOL
R
R
R
V
V
| y
V
I
I
DS(on)1
DS(on)2
DS(on)3
C
C
t
t
Q
Q
I
C
D
GS(off)
d(on)
d(off)
Q
F(S-D)
Q
DSS
GSS
GS
t
A
t
t
0
0
oss
rss
GD
rr
fs
iss
GS
r
f
G
rr
10 %
10 %
= 25 °C)
|
t
d(on)
Data Sheet D13455EJ2V0DS
t
90 %
V
V
V
V
V
V
V
V
V
f = 1 MHz
V
I
V
R
V
I
V
I
I
di/dt = 10 A / s
on
D
D
F
F
DS
GS
DS
DS
GS
GS
GS
DS
GS
DD
GS(on)
DD
GS
G
= –1.5 A
= –2.5 A
= 2.5 A, V
= 2.5 A, V
t
r
= 10
= –10 V
= –20 V, V
= –10 V, I
= –10 V, I
= –10 V
= ±12 V, V
= –4.5 V, I
= –4.0 V, I
= –2.5 V, I
= 0 V
= –10 V
= –4.0 V
V
I
GS(on)
D
= –4.0 V
t
d(off)
TEST CONDITIONS
t
GS
GS
off
90 %
90 %
D
D
D
D
D
t
GS
DS
= 0 V
= 0 V
10 %
f
= –1 mA
= –1.5 A
= –1.5 A
= –1.5 A
= –1.0 A
= 0 V
= 0 V
PG.
TEST CIRCUIT 2 GATE CHARGE
I
G
50
= 2 mA
MIN.
–0.5
1
D.U.T.
–0.92
TYP.
0.82
130
540
190
140
500
420
850
4.5
5.0
1.5
2.0
2.0
80
86
90
30
MAX.
–1.5
–10
115
120
190
10
R
V
DD
UNIT
L
PA1911
m
m
m
nC
nC
nC
nC
pF
pF
pF
ns
ns
ns
ns
ns
V
S
V
A
A