upa1901 Renesas Electronics Corporation., upa1901 Datasheet - Page 2

• Manufacturer Part Number: upa1901
• Description: N-channel Mos Field Effect Transistor For Switching
• Manufacturer: Renesas Electronics Corporation.

ELECTRICAL CHARACTERISTICS (T
2
V
Zero Gate Voltage Drain Current
Gate Leakage Current
Gate to Source Cut-off Voltage
Forward Transfer Admittance
Drain to Source On-state Resistance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Turn-on Delay Time
Rise Time
Turn-off Delay Time
Fall Time
Total Gate Charge
Gate to Source Charge
Gate to Drain Charge
Diode Forward Voltage
0
TEST CIRCUIT 1 SWITCHING TIME
GS
Duty Cycle
PG.
= 1 s
CHARACTERISTICS
R
1%
G
D.U.T.
R
V
DD
L
V
Wave Form
V
Wave Form
GS
DS
SYMBOL
R
R
R
V
V
| y
V
V
t
t
Q
Q
I
I
DS(on)1
DS(on)2
DS(on)3
C
C
GS(off)
C
d(off)
Q
F(S-D)
V
A
GSS
d(on)
DSS
GS
DS
t
t
oss
GS
GD
fs
iss
rss
0
DS
0
r
f
G
= 25°C)
10%
|
t
d(on)
90%
Data Sheet G15804EJ1V0DS
V
V
V
V
V
V
V
V
V
f = 1.0 MHz
V
V
R
V
V
I
I
t
D
F
on
DS
GS
DS
DS
GS
GS
GS
DS
GS
DD
GS
DD
GS
G
= 6.5 A, V
= 6.5 A
10% 10%
t
= 10
r
= 24 V
= 30 V, V
= 10 V, I
= 10 V, I
= 10 V
= 10 V, I
=
= 4.5 V, I
= 4.0 V, I
= 2.5 V, I
= 0 V
= 4.0 V
= 4.0 V
V
±
t
12 V, V
GS
d(off)
TEST CONDITIONS
GS
t
D
D
D
off
D
D
D
GS
90%
= 1.0 mA
= 3.5 A
= 3.5 A
DS
= 0 V
= 3.5 A
= 3.5 A
= 3.5 A
90%
t
= 0 V
f
= 0 V
TEST CIRCUIT 2 GATE CHARGE
PG.
MIN.
0.5
3.0
I
G
50
= 2 mA
TYP.
470
100
110
170
130
1.0
7.9
5.4
1.1
2.4
0.9
31
32
40
60
35
D.U.T.
MAX.
±
1.5
10
39
40
54
10
UNIT
PA1901
m
m
m
nC
nC
nC
pF
pF
pF
ns
ns
ns
ns
V
S
V
A
A
R
V
DD
L