upa1951 Renesas Electronics Corporation., upa1951 Datasheet - Page 2

• Manufacturer Part Number: upa1951
• Description: P-channel Mos Field Effect Transistor For Switching
• Manufacturer: Renesas Electronics Corporation.

ELECTRICAL CHARACTERISTICS (T
2
V
Zero Gate Voltage Drain Current
Gate Leakage Current
Gate Cut-off Voltage
Forward Transfer Admittance
Drain to Source On-state Resistance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Turn-on Delay Time
Rise Time
Turn-off Delay Time
Fall Time
Total Gate Charge
Gate to Source Charge
Gate to Drain Charge
Body Diode Forward Voltage
0
TEST CIRCUIT 1 SWITCHING TIME
GS( )
Duty Cycle
PG.
= 1 s
CHARACTERISTICS
R
1%
G
D.U.T.
R
V
L
DD
V
Wave Form
V
Wave Form
GS
DS
SYMBOL
R
R
R
R
V
V
| y
t
I
C
t
Q
Q
I
DS(on)1
DS(on)2
DS(on)3
DS(on)4
C
C
GS(off)
V
V
d(on)
d(off)
Q
F(S-D)
DSS
GSS
A
t
t
V
oss
iss
rss
GS
GD
fs
r
f
GS( )
DS( )
G
0
DS
0
= 25°C)
|
10%
t
d(on)
Data Sheet G15613EJ1V0DS
90%
V
V
V
V
V
V
V
V
V
V
f = 1.0 MHz
V
V
R
V
V
I
I
D
F
t
on
DS
GS
DS
DS
GS
GS
GS
GS
DS
GS
DD
GS
G
DD
GS
= 2.5 A
= 2.5 A, V
= 10
10% 10%
t
= 12 V, V
=
= 10 V, I
= 10 V, I
= 4.5 V, I
= 3.0 V, I
= 2.5 V, I
= 1.8 V, I
= 10 V
= 0 V
= 6.0 V, I
= 4.0 V
= 10 V
= 4.0 V
r
m
V
8.0 V, V
t
GS
TEST CONDITIONS
d(off)
GS
t
off
D
D
90%
D
D
D
D
D
GS
= 0 V
= 1.0 mA
= 1.5 A
DS
90%
= 1.5 A
= 1.5 A
= 1.5 A
= 1.0 A
= 1.5 A
t
f
= 0 V
= 0 V
TEST CIRCUIT 2 GATE CHARGE
PG.
MIN.
0.45
1.0
I
G
= 2 mA
50
TYP.
0.87
100
140
270
150
130
0.75
4.7
2.4
0.6
0.8
70
85
90
45
14
90
D.U.T.
MAX.
m
114
133
234
88
1.5
10
10
PA1951
UNIT
m
m
m
m
nC
nC
nC
pF
pF
pF
ns
ns
ns
ns
V
S
V
R
V
A
A
DD
L