upa1950 Renesas Electronics Corporation., upa1950 Datasheet - Page 2

• Manufacturer Part Number: upa1950
• Description: P-channel Mos Field Effect Transistor For Switching
• Manufacturer: Renesas Electronics Corporation.

ELECTRICAL CHARACTERISTICS (T
2
V
Zero Gate Voltage Drain Current
Gate Leakage Current
Gate Cut-off Voltage
Forward Transfer Admittance
Drain to Source On-state Resistance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Turn-on Delay Time
Rise Time
Turn-off Delay Time
Fall Time
Total Gate Charge
Gate to Source Charge
Gate to Drain Charge
Body Diode Forward Voltage
0
TEST CIRCUIT 1 SWITCHING TIME
GS( )
Duty Cycle
PG.
= 1 s
CHARACTERISTICS
R
1%
G
D.U.T.
R
V
DD
L
V
Wave Form
V
Wave Form
GS
DS
SYMBOL
R
R
R
R
V
V
| y
t
t
I
DS(on)1
DS(on)2
DS(on)3
DS(on)4
C
Q
Q
I
C
C
GS(off)
Q
V
V
A
d(on)
d(off)
F(S-D)
DSS
GSS
t
t
V
oss
fs
iss
rss
GS
GD
r
f
GS( )
DS( )
G
= 25°C)
0
DS
0
|
10%
t
d(on)
90%
Data Sheet G15620EJ2V0DS
V
V
V
V
V
V
V
V
V
V
f = 1.0 MHz
V
V
R
V
V
I
I
D
F
t
on
DS
GS
DS
DS
GS
GS
GS
GS
DS
GS
DD
GS
G
DD
GS
= 2.5 A, V
= –2.5 A
= 10
10% 10%
= –10 V
t
= –12 V, V
= –10 V, I
= –10 V, I
= –10 V
=
= –4.5 V, I
= –3.0 V, I
= –2.5 V, I
= –1.8 V, I
= 0 V
= –6.0 V, I
= –4.0 V
= –4.0 V
r
m
V
8.0 V, V
t
GS
d(off)
TEST CONDITIONS
GS
t
D
D
off
D
D
D
D
GS
90%
D
= 0 V
DS
= –1.0 mA
= –1.5 A
= –1.5 A
= –1.5 A
= –1.5 A
= –1.0 A
90%
= –1.5 A
t
= 0 V
f
= 0 V
TEST CIRCUIT 2 GATE CHARGE
PG.
–0.45
MIN.
1.0
I
G
= 2 mA
50
TYP.
0.86
105
135
160
225
220
150
120
1.9
0.5
0.7
90
40
15
80
D.U.T.
MAX.
–1.5
–10
m10
130
176
205
375
UNIT
PA1950
m
m
m
m
pF
pF
pF
nC
nC
nC
ns
ns
ns
ns
V
S
V
A
A
R
V
DD
L