upa1952 Renesas Electronics Corporation., upa1952 Datasheet
upa1952
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upa1952 Summary of contents
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P-CHANNEL MOS FIELD EFFECT TRANSISTOR DESCRIPTION The PA1952 is a switching device, which can be driven directly by a 1.8 V power source. The device features a low on-state resistance and excellent switching characteristics, and is suitable for applications such ...
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ELECTRICAL CHARACTERISTICS (T CHARACTERISTICS Zero Gate Voltage Drain Current Gate Leakage Current Gate Cut-off Voltage Forward Transfer Admittance Drain to Source On-state Resistance Input Capacitance Output Capacitance Reverse Transfer Capacitance Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time ...
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TYPICAL CHARACTERISTICS (T A DERATING FACTOR OF FORWARD BIAS SAFE OPERATING AREA 120 100 100 125 T - Ambient Temperature - C A FORWARD BIAS SAFE OPERATING AREA - 100 I ...
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DRAIN CURRENT vs. DRAIN TO SOURCE VOLTAGE - 8 Pulsed 0.2 - 0.4 - 0 Drain to Source ...
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DRAIN TO SOURCE ON-STATE RESISTANCE vs. DRAIN CURRENT 300 Pulsed 250 T = 125°C A 75°C 25°C 200 25°C 150 100 50 - 0. Drain Current - A D ...
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DYNAMIC INPUT/OUTPUT CHARACTERISTICS - 2 4 0 Gate Change - nC G ...
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Data Sheet G15933EJ1V0DS PA1952 7 ...
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The information in this document is current as of August, 2002. The information is subject to change without notice. For actual design-in, refer to the latest publications of NEC's data sheets or data books, etc., for the most up-to-date specifications ...