upa1930 Renesas Electronics Corporation., upa1930 Datasheet - Page 2

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upa1930

Manufacturer Part Number
upa1930
Description
P-channel Mosfet For Switching
Manufacturer
Renesas Electronics Corporation.
Datasheet

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Company
Part Number
Manufacturer
Quantity
Price
Part Number:
upa1930TE-T1
Manufacturer:
NEC
Quantity:
42 000
ELECTRICAL CHARACTERISTICS (T
Note Pulsed
2
V
Zero Gate Voltage Drain Current
Gate Leakage Current
Gate to Source Cut-off Voltage
Forward Transfer Admittance
Drain to Source On-state Resistance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Turn-on Delay Time
Rise Time
Turn-off Delay Time
Fall Time
Total Gate Charge
Gate to Source Charge
Gate to Drain Charge
Diode Forward Voltage
GS (−)
0
TEST CIRCUIT 1 SWITCHING TIME
τ = 1 s
Duty Cycle ≤ 1%
PG.
μ
τ
CHARACTERISTICS
R
G
D.U.T.
Note
Note
R
V
L
DD
Note
V
Wave Form
V
Wave Form
GS
DS
SYMBOL
R
R
V
V
| y
I
DS(on)1
DS(on)2
C
t
t
Q
Q
I
C
C
A
GS(off)
V
V
d(on)
d(off)
Q
F(S-D)
DSS
GSS
t
V
t
oss
GD
fs
iss
rss
GS
GS(−)
DS(−)
r
f
G
= 25°C)
0
DS
0
|
10 %
t
d(on)
90 %
Data Sheet G18030EJ1V0DS
t
on
V
V
V
V
V
V
V
V
f = 1.0 MHz
V
V
R
V
V
I
I
D
F
DS
GS
DS
DS
GS
GS
DS
GS
DD
GS
G
DD
GS
= 4.5 A, V
10 % 10 %
=
t
r
= 6 Ω
=
= m16 V, V
=
=
=
=
=
= 0 V
=
=
=
=
V
4.5 A
t
GS
d(off)
30 V, V
10 V, I
10 V, I
10 V
10 V, I
4.5 V, I
15 V, I
10 V,
24 V,
10 V,
TEST CONDITIONS
t
GS
off
90 %
D
D
D
D
= 0 V
DS
D
90 %
GS
t
=
=
f
=
=
=
= 0 V
= 0 V
1.0 mA
2.5 A
2.5 A
2.5 A,
2.5 A
TEST CIRCUIT 2 GATE CHARGE
PG.
I
G
MIN.
= −2 mA
1.0
50 Ω
1
D.U.T.
TYP.
19.5
0.93
325
8.5
3.5
7.5
1.1
2.3
58
77
78
65
33
MAX.
μ
m10
100
77
2.5
1
PA1930
R
V
DD
L
UNIT
μ
μ
pF
pF
pF
nC
nC
nC
ns
ns
ns
ns
V
S
V
A
A

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