upa1456 Renesas Electronics Corporation., upa1456 Datasheet

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upa1456

Manufacturer Part Number
upa1456
Description
Npn Silicon Power Transistor Array Low Speed Switching Use Darlington Transistor Industrial Use
Manufacturer
Renesas Electronics Corporation.
Datasheet

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Document No. IC-3521
Date Published September 1994 P
Printed in Japan
(O. D. No. IC-6340)
DESCRIPTION
Power Transistor Array that built in 4 circuits designed
for driving solenoid, relay, lamp and so on.
FEATURES
ORDERING INFORMATION
Please refer to "Quality grade on NEC Semiconductor Devices"
(Document number IEI-1209) published by NEC Corporation to
know the specification of quality grade on the devices and its
recommended applications.
ABSOLUTE MAXIMUM RATINGS (T
Collector to Base Voltage
Collector to Emitter Voltage
Emitter to Base Voltage
Collector Current (DC)
Collector Current (pulse)
Base Current (DC)
Total Power Dissipation
Total Power Dissipation
Junction Temperature
Storage Temperature
* PW
** 4 Circuits, T
*** 4 Circuits, T
Part Number
The
Easy mount by 0.1 inch of terminal interval.
High h
PA1456H
PA1456 is NPN silicon epitaxial Darlington
FE
300 s, Duty Cycle
LOW SPEED SWITCHING USE (DARLINGTON TRANSISTOR)
for Darlington Transistor.
a
c
= 25 ˚C
= 25 ˚C
NPN SILICON POWER TRANSISTOR ARRAY
10 Pin SIP
Package
The information in this document is subject to change without notice.
10 %
V
V
V
I
I
I
P
P
T
T
C(DC)
C(pulse)
B(DC)
T1
T2
j
stg
CBO
CEO
EBO
**
***
–55 to +150 ˚C
*
Quality Grade
DATA SHEET
INDUSTRIAL USE
150
100
150
Standard
0.5
3.5
28
7
10
a
5
= 25 ˚C)
A/unit
A/unit
A/unit
W
W
˚C
V
V
V
SILICON TRANSISTOR ARRAY
(B)
2
1
1.4
1 2 3 4 5 6 7 8 9 10
3
R
26.8 MAX.
0.6 ±0.1
1
CONNECTION DIAGRAM
PACKAGE DIMENSION
4
R
2
(in millimeters)
(C)
(E)
5
6
2.54
2, 4, 6, 8
3, 5, 7, 9
1, 10
R
R
7
1
2
PA1456
= 3.0 k
= 300
.
.
.
.
8
PIN No.
: Base (B)
: Collector (C)
: Emitter (E)
4.0
©
9
0.5 ±0.1
1.4
10
1994

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upa1456 Summary of contents

Page 1

NPN SILICON POWER TRANSISTOR ARRAY LOW SPEED SWITCHING USE (DARLINGTON TRANSISTOR) DESCRIPTION The PA1456 is NPN silicon epitaxial Darlington Power Transistor Array that built in 4 circuits designed for driving solenoid, relay, lamp and so on. FEATURES • Easy mount ...

Page 2

ELECTRICAL CHARACTERISTICS (T CHARACTERISTIC SYMBOL Collector Leakage Current I CBO Emitter Leakage Current I EBO DC Current Gain h FE1 DC Current Gain h FE2 Collector Saturation Voltage V CE(sat) Base Saturation Voltage V BE(sat) Turn On Time t on ...

Page 3

TYPICAL CHARACTERISTICS (T a DERATING CURVE OF SAFE OPERATING AREA 100 100 T - Case Temperature - ˚C C TOTAL POWER DISSIPATION vs. AMBIENT TEMPERATURE NEC PA1456 4 4 Circuits Operation 3 Circuits Operation ...

Page 4

TRANSIENT THERMAL RESISTANCE 100 10 1.0 0.1 0 Pulse Width - ms COLLECTOR CURRENT vs. COLLECTOR TO EMITTER VOLTAGE 0 Collector ...

Page 5

REFERENCE Document Name NEC semiconductor device reliability/quality control system. Quality grade on NEC semiconductor devices. Semiconductor device mounting technology manual. Semiconductor device package manual. Guide to quality assurance for semiconductor devices. Semiconductor selection guide. PA1456 Document No. TEI-1202 IEI-1209 IEI-1207 ...

Page 6

No part of this document may be copied or reproduced in any form or by any means without the prior written consent of NEC Corporation. NEC Corporation assumes no responsibility for any errors which may appear in this document. ...

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