upa1436ah Renesas Electronics Corporation., upa1436ah Datasheet

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upa1436ah

Manufacturer Part Number
upa1436ah
Description
Npn Silicon Power Transistor Array High Speed Switching Use Darlington Transistor Industrial Use
Manufacturer
Renesas Electronics Corporation.
Datasheet

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Part Number:
UPA1436AH
Manufacturer:
NEC
Quantity:
20 000
Document No. IC-3482
Date Published September 1994 P
Printed in Japan
(O.D. No. IC-8705)
DESCRIPTION
Power Transistor Array that built in 4 circuits designed
for driving solenoid, relay, lamp and so on.
FEATURES
ORDERING INFORMATION
Please refer to “Quality grade on NEC Semiconductor
Device” (Document number IEI-1209) published by NEC
Corporation to know the specification of quality grade on
the devices and its recommended applications.
ABSOLUTE MAXIMUM RATINGS (T
Collector to Base Voltage
Collector to Emitter Voltage V
Emitter to Base Voltage
Collector Current (DC)
Collector Current (pulse)
Base Current (DC)
Total Power Dissipation
Total Power Dissipation
Junction Temperature
Storage Temperature
* PW
** 4 Circuits
Part Number
The
Easy mount by 0.1 inch of terminal interval.
High h
C-E Reverce Diode built in.
High Speed Switching.
(T
(T
PA1436AH
a
c
= 25 ˚C)
= 25 ˚C)
PA1436A is NPN silicon epitaxial Darlington
FE
HIGH SPEED SWITCHING USE (DARLINGTON TRANSISTOR)
350 s, Duty Cycle
for Darlington Transistor.
NPN SILICON POWER TRANSISTOR ARRAY
10 Pin SIP
Package
The information in this document is subject to change without notice.
2 %
V
V
I
I
I
P
P
T
T
C(DC)
C(pulse)
B(DC)
T1
T2
j
stg
CBO
CEO
EBO
**
**
–55 to +150
*
Quality Grade
DATA SHEET
a
INDUSTRIAL USE
Standard
= 25 ˚C)
150
100
150
0.3
3.5
28
8
3
5
A/unit
A/unit
A/unit
W
W
˚C
˚C
V
V
V
SILICON TRANSISTOR ARRAY
(B)
2
1
1.4
1
2 3 4 5 6 7 8 910
3
R
26.8 MAX.
0.6 ±0.2
CONNECTION DIAGRAM
1
PACKAGE DIMENSION
2, 4, 6, 8: Base (B)
3, 5, 7, 9: Collector (C)
R
R
4
R
1
2
(in millimeters)
2
.
= 5 k
.
= 1.3 k
.
.
1, 10: Emitter (E)
(C)
(E)
5
PIN NO.
PA1436A
6
2.54
7
8
4.0
©
9
0.5 ±0.2
1.4
10
1994

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upa1436ah Summary of contents

Page 1

NPN SILICON POWER TRANSISTOR ARRAY HIGH SPEED SWITCHING USE (DARLINGTON TRANSISTOR) DESCRIPTION The PA1436A is NPN silicon epitaxial Darlington Power Transistor Array that built in 4 circuits designed for driving solenoid, relay, lamp and so on. FEATURES • Easy mount ...

Page 2

ELECTRICAL CHARACTERISTICS (T CHARACTERISTIC SYMBOL Collector Leakage Current I CBO Emitter Leakage Current I EBO DC Current Gain h FE1 DC Current Gain h FE2 Collector Saturation Voltage V CE(sat) Base Saturation Voltage V BE(sat) Turn On Time t on ...

Page 3

TYPICAL CHARACTERISTICS ( ˚C) a DERATING CURVE OF SAFE OPERATING AREA 100 100 T - Case Temperature - ˚C C TOTAL POWER DISSIPATION vs. AMBIENT TEMPERATURE NEC PA1436AH 4 4 Circuits Operation ...

Page 4

DC CURRENT GAIN vs. COLLECTOR CURRENT 10000 Pulsed 1000 100 0.01 0 Collector Current - A C BASE SATURATION VOLTAGE vs. COLLECTOR CURRENT Collector Current - A ...

Page 5

REFERENCE Document Name NEC semiconductor device reliability/quality control system. Quality grade on NEC semiconductor devices. Semiconductor device mounting technology manual. Semiconductor device package manual. Guide to quality assurance for semiconductor devices. Semiconductor selection guide. PA1436A Document No. TEI-1202 IEI-1209 IEI-1207 ...

Page 6

No part of this document may be copied or reproduced in any form or by any means without the prior written consent of NEC Corporation. NEC Corporation assumes no responsibility for any errors which may appear in this document. ...

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