upa1437h Renesas Electronics Corporation., upa1437h Datasheet

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upa1437h

Manufacturer Part Number
upa1437h
Description
Pnp Silicon Power Transistor Array Low Speed Switching Use Darlington Transistor Industrial Use
Manufacturer
Renesas Electronics Corporation.
Datasheet

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Document No. IC-3516
Date Published September 1994 P
Printed in Japan
DESCRIPTION
Power Transistor Array that built in 4 circuits designed
for driving solenoid, relay, lamp and so on.
FEATURES
ORDERING INFORMATION
Please refer to "Quality grade on NEC Semiconductor Devices"
(Document number IEI-1209) published by NEC Corporation to
know the specification of quality grade on the devices and its
recommended applications.
ABSOLUTE MAXIMUM RATINGS (T
Collector to Base Voltage
Collector to Emitter Voltage
Emitter to Base Voltage
Collector Current (DC)
Collector Current (pulse)
Base Current (DC)
Total Power Dissipation
Total Power Dissipation
Junction Temperature
Storage Temperature
* PW
** 4 Circuits, T
*** 4 Circuits, T
Part Number
The
Easy mount by 0.1 inch of terminal interval.
High h
PA1437H
PA1437 is PNP silicon epitaxial Darlington
FE
300 s, Duty Cycle
LOW SPEED SWITCHING USE (DARLINGTON TRANSISTOR)
for Darlington Transistor.
a
c
= 25 ˚C
= 25 ˚C
PNP SILICON POWER TRANSISTOR ARRAY
10 Pin SIP
Package
The information in this document is subject to change without notice.
10 %
V
V
V
I
I
I
P
P
T
T
C(DC)
C(pulse)
B(DC)
T1
T2
j
stg
CBO
CEO
EBO
**
***
–55 to +150 ˚C
*
Quality Grade
DATA SHEET
–100
–100
INDUSTRIAL USE
–0.3
150
Standard
3.5
m
m
28
–7
a
3
6
= 25 ˚C)
A/unit
A/unit
A/unit
W
W
˚C
V
V
V
SILICON TRANSISTOR ARRAY
(B)
2
1
1.4
1 2 3 4 5 6 7 8 9 10
R
3
26.8 MAX.
0.6 ±0.1
1
CONNECTION DIAGRAM
PACKAGE DIMENSION
4
R
2
(in millimeters)
(C)
(E)
5
6
2.54
2, 4, 6, 8
3, 5, 7, 9
1, 10
R
R
1
2
PA1437
7
= 8.3 k
= 600
.
.
.
.
8
PIN No.
: Base (B)
: Collector (C)
: Emitter (E)
4.0
©
9
0.5 ±0.1
1.4
10
1994

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upa1437h Summary of contents

Page 1

PNP SILICON POWER TRANSISTOR ARRAY LOW SPEED SWITCHING USE (DARLINGTON TRANSISTOR) DESCRIPTION The PA1437 is PNP silicon epitaxial Darlington Power Transistor Array that built in 4 circuits designed for driving solenoid, relay, lamp and so on. FEATURES • Easy mount ...

Page 2

ELECTRICAL CHARACTERISTICS (T CHARACTERISTIC SYMBOL Collector to Emitter V CEO(SUS) Sustaining Voltage Collector Leakage Current I CBO Emitter Leakage Current I EBO DC Current Gain h FE1 DC Current Gain h FE2 Collector Saturation Voltage V CE(sat) Base Saturation Voltage ...

Page 3

TYPICAL CHARACTERISTICS (T a DERATING CURVE OF SAFE OPERATING AREA 100 100 T - Case Temperature - ˚C C TOTAL POWER DISSIPATION vs. AMBIENT TEMPERATURE NEC PA1437 4 4 Circuits Operation 3 Circuits Operation ...

Page 4

TRANSIENT THERMAL RESISTANCE 100 10 1 0.1 0 Pulse Width - ms 4 COLLECTOR CURRENT vs. COLLECTOR TO EMITTER VOLTAGE –5 –4.0 –350 –300 –250 –3.0 –2.0 –1.0 100 0 –1.0 V ...

Page 5

REFERENCE Document Name NEC semiconductor device reliability/quality control system. Quality grade on NEC semiconductor devices. Semiconductor device mounting technology manual. Semiconductor device package manual. Guide to quality assurance for semiconductor devices. Semiconductor selection guide. PA1437 Document No. TEI-1202 IEI-1209 IEI-1207 ...

Page 6

No part of this document may be copied or reproduced in any form or by any means without the prior written consent of NEC Corporation. NEC Corporation assumes no responsibility for any errors which may appear in this document. ...

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