upa104g-e1 Renesas Electronics Corporation., upa104g-e1 Datasheet - Page 3

• Manufacturer Part Number: upa104g-e1
• Description: High Frequency Npn Transistor Array
• Manufacturer: Renesas Electronics Corporation.

ELECTRICAL CHARACTERISTICS
CONNECTION DIAGRAM
SYMBOLS
* Measured by installing a single transistor in a Micro-X package: the value shown is a reference value.
Note: Substrate should be connected to the lowest voltage point in order to prevent latch-up.
I
I
C
C
C
h
CBO
EBO
f
FE
CB
EB
CS
T
Collector Cutoff Current at V
Emitter Cutoff Current at V
Direct Current Amplification at V
Collector to Base Capacitance at V
Emitter to Base Capacitance at V
Collector/Substrate Capacitance, V
Gain Bandwidth Product* at V
PARAMETERS AND CONDITIONS
(Top View)
SUB
EB
14
1
CB
14
= 1 V, I
1
CE
= 5 V, I
CE
= 3 V, I
(Unless otherwise specified T
EB
Q
13
CB
CS
2
= 3 V, I
5
Data Sheet P10709EJ2V0DS00
Q
= 0, f = 1 MHz (Q4 thru Q6)
13
= 3 V, f = 1 MHz (Q3, Q5, Q6)
C
= 3 V, f = 1 MHz (Q3, Q5, Q6)
2
5
= 0 (Q4 thru Q6)
E
C
= 0 (Q1 thru Q6)
12
Q
Q
3
= 10 mA
C
1
1
12
= 5 mA (Q4 and Q6)
3
PA104B
PA104G
11
Q
4
2
Q
11
Q
4
4
2
Q
Q
10
5
4
3
Q
10
5
3
9
6
Q
6
A
9
6
= +25 ˚C PA104B, PA104G common)
Q
8
7
UNITS
6
GHz
pF
pF
pF
A
A
8
7
MIN.
40
TYP.
100
0.9
1.4
1.4
9.0
PA104
MAX.
250
1.0
1.0
1.8
2.8
2.8
3