upa103 ETC-unknow, upa103 Datasheet

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upa103

Manufacturer Part Number
upa103
Description
High Frequency Transistor Array
Manufacturer
ETC-unknow
Datasheet

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Part Number
Manufacturer
Quantity
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Part Number:
upa103G
Manufacturer:
NEC
Quantity:
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Part Number:
upa103G-E1
Manufacturer:
NEC
Quantity:
3 048
Document No. P10708EJ2V0DS00 (2nd edition)
Date Published October 1999 N CP(K)
Printed in Japan
FEATURES
• FIVE MONOLITHIC 9 GHz f
• OUTSTANDING h
• TWO PACKAGE OPTIONS:
DESCRIPTION AND APPLICATIONS
individual bipolar transistors. It is available in a surface mount 14-pin plastic SOP package and a 14-pin ceramic package.
Typical applications include: differential amplifiers and oscillators, high speed comparators, advanced cellular phone
systems, electro-optic and other signal processing up to 1.5 gigabits/second.
ORDERING INFORMATION
ABSOLUTE MAXIMUM RATINGS (T
PART NUMBER
SYMBOLS
PA103B-E1
PA103G-E1
Two of these use a common emitter pin and can be used as differential amplifiers
The PA103 is a user configurable Silicon bipolar transistor array consisting of a common emitter pair and three
* Absolute maximum ratings for each transistor.
V
V
PA103B: Superior thermal dissipation due to studded ceramic package
PA103G: Reduced circuit size due to 14-pin plastic SOP package for surface mounting
V
T
CBO
CEO
EBO
I
P
T
STG
C
T
*
J
*
*
*
The information in this document is subject to change without notice. Before using this document, please
confirm that this is the latest version.
Not all devices/types available in every country. Please check with local NEC representative for availability
and additional information.
Collector to Base Voltage
Collector to Emitter Voltage
Emitter to Base Voltage
Collector Current
Power Dissipation
Junction Temperature
Storage Temperature
PARAMETERS
14-pin ceramic package
14-pin plastic SOP (225 mil)
FE
HIGH FREQUENCY NPN TRANSISTOR ARRAY
LINEARITY
PACKAGE
PA103B
PA103G
PA103B
PA103G
PA103B
PA103G
T
TRANSISTORS:
Caution electro-static sensitive devices
The mark
UNITS
mW
mW
mA
V
V
V
C
C
C
C
DATA SHEET
A
= +25 C)
–55 to +200
–55 to +125
RATINGS
shows major revised points.
650
350
200
125
2.5
15
40
6
COMPOUND TRANSISTOR
©
PA103
1995, 1999

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upa103 Summary of contents

Page 1

HIGH FREQUENCY NPN TRANSISTOR ARRAY FEATURES • FIVE MONOLITHIC 9 GHz f Two of these use a common emitter pin and can be used as differential amplifiers • OUTSTANDING h LINEARITY FE • TWO PACKAGE OPTIONS: PA103B: Superior thermal dissipation ...

Page 2

PACKAGE DIMENSIONS (UNIT: mm) 14 PIN CERAMIC PACKAGE TOP VIEW SIDE VIEW BOTTOM VIEW 14 PIN PLASTIC SOP (225 mil 10.2 0.26 1.49 1.27 +0.10 0.40 M 0.10 –0.05 0.1 0.1 +0.21 1.59 –0.20 NOTE Each lead centerline ...

Page 3

ELECTRICAL CHARACTERISTICS SYMBOLS PARAMETERS AND CONDITIONS I Collector Cutoff Current at V CBO CB I Emitter Cutoff Current at V EBO EB h Direct Current Amplification Direct Current Amplification Ratio at V FE1 FE2 V ...

Page 4

TYPICAL PERFORMANCE CHARACTERISTICS COLLECTOR CURRENT vs. COLLECTOR TO EMITTER VOLTAGE 10 100 Collector to Emitter Voltage CURRENT GAIN vs. COLLECTOR CURRENT 1000 ...

Page 5

TYPICAL HIGH SPEED COMPARATOR R 1 ANALOG INPUT Q 1 REFERENCE TYPICAL DIFFERENTIAL OSCILLATOR OUT Q 2 RFC BIAS TYPICAL COMMON MODE DIFFERENTIAL AMP BB1 V BB2 1 K ...

Page 6

NOTES ON CORRECT USE (1) Observe precautions for handling because of electro-static sensitive devices. (2) Form a ground pattern as wide as possible to minimize ground impedance (to prevent undesired operation). (3) Design circuits connected Sub pin to the lowest ...

Page 7

Data Sheet P10708EJ2V0DS00 PA103 7 ...

Page 8

NESAT (NEC Silicon Advanced Technology trademark of NEC Corporation. The information in this document is subject to change without notice. Before using this document, please confirm that this is the latest version. No part of this document may ...

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