k6r1008c1c-c Samsung Semiconductor, Inc., k6r1008c1c-c Datasheet - Page 5

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k6r1008c1c-c

Manufacturer Part Number
k6r1008c1c-c
Description
128kx8 Bit High-speed Cmos Static Ram 5v Operating . Operated At Commercial And Industrial Temperature Ranges.
Manufacturer
Samsung Semiconductor, Inc.
Datasheet
WRITE CYCLE*
* The above parameters are also guaranteed at industrial temperature range.
K6R1008C1C-C/C-L, K6R1008C1C-I/C-P
TIMING DIAGRAMS
Write Cycle Time
Chip Select to End of Write
Address Set-up Time
Address Valid to End of Write
Write Pulse Width(OE High)
Write Pulse Width(OE Low)
Write Recovery Time
Write to Output High-Z
Data to Write Time Overlap
Data Hold from Write Time
End Write to Output Low-Z
TIMING WAVEFORM OF READ CYCLE(1)
TIMING WAVEFORM OF READ CYCLE(2)
Address
Data Out
Address
CS
OE
Data out
V
Current
CC
Parameter
I
I
SB
CC
Previous Valid Data
Symbol
t
t
t
t
t
t
t
WHZ
t
t
WP1
t
t
OW
WC
CW
AW
WP
WR
DW
AS
DH
t
K6R1008C1C-10
PU
Min
t
10
10
LZ(4,5)
(Address Controlled
(WE=V
7
0
7
7
0
0
5
0
3
t
OLZ
t
OH
50%
t
AA
IH
)
t
CO
- 5 -
t
OE
Max
t
5
-
-
-
-
-
-
-
-
-
-
AA
,
CS=OE=V
t
RC
t
RC
K6R1008C1C-12
Min
12
12
8
0
8
8
0
0
6
0
3
IL
, WE=V
Valid Data
IH
Max
)
6
-
-
-
-
-
-
-
-
-
-
Valid Data
K6R1008C1C-15
Min
15
15
9
0
9
9
0
0
7
0
3
CMOS SRAM
t
t
t
HZ(3,4,5)
OH
OHZ
50%
t
PD
PRELIMINARY
PRELIMINARY
September 2001
Max
7
-
-
-
-
-
-
-
-
-
-
Revision 3.0
Unit
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns

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