k7n163645m Samsung Semiconductor, Inc., k7n163645m Datasheet - Page 11

• Manufacturer Part Number: k7n163645m
• Description: 512kx36 & 1mx18-bit Pipelined Ntramtm
• Manufacturer: Samsung Semiconductor, Inc.

K7N163645M
K7N161845M
(T
TEST CONDITIONS
DC ELECTRICAL CHARACTERISTICS
Notes : 1. Reference AC Operating Conditions and Characteristics for input and timing.
Input Leakage Current(except ZZ)
Output Leakage Current
Operating Current
Standby Current
Output Low Voltage
Output High Voltage
Input Low Voltage
Input High Voltage
Input Pulse Level
Input Rise and Fall Time(Measured at 20% to 80%)
Input and Output Timing Reference Levels
Output Load
A
=0 to 70 C, V
2. Data states are all zero.
3. In Case of I/O Pins, the Max. V
PARAMETER
DD
=2.5V 5%, unless otherwise specified)
V
SS-
V
0.8V
SS
PARAMETER
IH
SYMBOL
=V
V
IH
V
I
I
V
V
I
I
I
V
DDQ
SB1
SB2
I
OL
CC
SB
OH
IL
OL
IH
IL
+0.3V
V
Output Disabled,
V
Cycle Time
Device deselected, I
ZZ V
All Inputs 0.2V or
Device deselected, I
All Inputs=fixed (V
Device deselected, I
f=Max, All Inputs V
I
I
OL
OH
DD
DD
=1.0mA
=-1.0mA
=Max ; V
=Max , I
IL
, f=Max,
(V
DD
OUT
TEST CONDITIONS
IN
=2.5V 5%, T
20% t
t
512Kx36 & 1Mx18 Pipelined NtRAM
CYC
=V
=0mA
- 11 -
SS
DD
Min
CYC
IL
OUT
OUT
OUT
to V
V
-0.2V or 0.2V)
(MIN)
or V
DD
=0mA, ZZ V
=0mA, ZZ 0.2V, f=0,
=0mA,
DD
-0.2V
IH
A
=0 C to +70 C)
DD
-0.2V,
-16
-15
-13
-10
-16
-15
-13
-10
-0.3*
MIN
2.0
1.7
-2
-2
-
-
-
-
-
-
-
-
-
-
-
V
See Fig. 1
0 to 2.5V
DD
VALUE
1.0V/ns
1.25V
MAX
320
300
280
250
0.4
0.7
+2
+2
70
60
50
40
30
30
+0.3**
-
UNIT
mA
mA
mA
mA
V
V
V
V
January 2000
A
A
NOTES
Rev 1.0
1,2
3
TM