k9f5608u0d-p Samsung Semiconductor, Inc., k9f5608u0d-p Datasheet - Page 19
k9f5608u0d-p
Manufacturer Part Number
k9f5608u0d-p
Description
Flash Memory
Manufacturer
Samsung Semiconductor, Inc.
Datasheet
1.K9F5608U0D-P.pdf
(35 pages)
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System Interface Using CE don’t-care.
For an easier system interface, CE may be inactive during the data-loading or sequential data-reading as shown below. The internal
528byte page registers are utilized as seperate buffers for this operation and the system design gets more flexible. In addition, for
voice or audio applications which use slow cycle time on the order of u-seconds, de-activating CE during the data-loading and read-
ing would provide significant savings in power consumption.
Figure 6. Program Operation with CE don’t-care.
Figure 7. Read Operation with CE don’t-care.
K9F5608R0D
K9F5608U0D
CLE
CE
WE
ALE
CE
WE
I/Ox
R/B
WE
CLE
ALE
CE
RE
I/Ox
t
CS
00h
80h
K9F5608B0D
Start Add.(3Cycle)
Start Add.(3Cycle)
t
WP
On K9F5608U0D_P,F or K9F5608B0D_P
CE must be held
low during tR
t
CH
t
R
Data Input
19
I/O
CE
RE
0
~
7
CE don’t-care
CE don’t-care
t
CEA
Data Output(sequential)
t
REA
FLASH MEMORY
Data Input
out
t
OH
10h